Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs

Mativenga, Mallory; Jun, Haeyeon; Choe, Younwoo; Um, Jae Gwang; Jang, Jin

doi:10.1109/jeds.2017.2751651

Cited by 30 publications

(22 citation statements)

References 37 publications

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“…Compared to rectangular-shaped TFTs, a circular (Corbino) TFT structure achieved higher stability against mechanical bending strain, where the inner ring was the source and the outer ring the drain, [104] as shown in Figure 11. In the measurement of the Corbino TFT, the outer ring was biased as the drain because this configuration could give rise to infinite output resistance beyond pinch-off and so enable the TFTs to better act as current drivers in relevant applications.…”

Section: Circular Structurementioning

confidence: 99%

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Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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Due to the advantages of being light, conformable, nonfragile, and bendable, flexible electronic devices have been considered for various applications such as flexible displays, bendable memories, e-textiles, radio frequency identifications (RFIDs), artificial skin/muscles, and wearable electronics. [1,2] Compared to rigid devices, the main challenges of flexible devices are finding suitable materials and fabrication methods to overcome the inherent barrier of low glass-transition temperature (T g ) for flexible substrates.Organic small molecules and polymers are flexible, but the corresponding devices are subject to issues resulting from short lifetime and difficult packaging. Conventional hydrogenated amorphoussilicon (a-Si:H) thin-film transistors (TFTs) can be prepared on flexible plastic substrates due to the low processing temperature of plasma-enhanced chemical vapor deposition (PECVD) (<200 C). [3] However, reduced carrier mobility and unstable characteristics under gate-bias stress limit their applications in flexible electronics. [4] Although low-temperature polysilicon (LTPS) TFTs show high mobility and stable characteristics, they are still unsuitable for flexible devices due to the crystallization temperature of polysilicon being higher than the T g of plastic substrates. [5,6] In addition, nanocrystalline-silicon (nc-Si) TFTs can show both good device stability and high carrier mobility (>10 2 cm 2 V À1 s À1 ). However, their high cost is a huge obstacle for industrial production, and the growth rate of nc-Si still requires further enhancement.Transparent oxide semiconductors (TOSs) have attracted considerable research interest because of their superior controllability in carrier generation and excellent optical transparency in the whole visible region. TFTs based on TOSs, such as InGaZnO, GaSnZnO, and AlSnZnInO, have been intensively studied due to the lower processing temperature than nc-Si TFTs, better uniformity than LTPS TFTs, and higher mobility and better stability than a-Si:H TFTs. [7][8][9] Among the state-of-the-art semiconductor materials, amorphous InGaZnO (a-IGZO), which was first fabricated by Nomura et al. in 2003, [10] is one of the most promising options, with an a-IGZO TFT successfully prepared on a flexible polyethylene terephthalate (PET)

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Section: Circular Structurementioning

confidence: 99%

Section: Circular Structurementioning

confidence: 99%

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Song

Huang

Han

et al. 2021

Physica Status Solidi (a)

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“…The simulated transfer characteristics show in general that the drain current decreases as strain are introduced. In general, the electrical characteristics of a‐IGZO TFTs are degraded with bending strain, reducing the field‐effect mobility, and on current 35,36 . A possible reason for the variation comes from the modification in the localized DOS in the bandgap.…”

Section: Device Simulationmentioning

confidence: 99%

Deformation‐induced stress/strain mapping and performance evaluation of a‐IGZO thin‐film transistors for flexible electronic applications

2020

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In the flexible electronics sector, there is an urgent need for higher performance, and hence, many new technologies are emerging in recent years. The field of organic and printed electronics allows low production costs and large areas. The silicon technology allows nanometric resolutions and better performance. A new technology CAD (TCAD)‐based design methodology is needed to combine both mechanical flexibility and high performance. This work presents a predictive TCAD calibration methodology for indium‐gallium‐zinc‐oxide thin‐film transistors (TFTs), employing physics‐based modeling to support and enhance simulation‐based device development. In this work, based on the nonlinear finite element technique, a TCAD framework has been developed to introduce different types of large deformations and obtain the local stress/strain profiles (mapping) inside the devices. The impacts of various kinds of deformations on the electrical characteristics of the strained TFTs are studied. The feasibility (via predictions) for amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) TFTs, combining considerable mechanical flexibility, high electrical performance, and finally, excellent stability under deformation, may be useful for mechanical deformation‐aware design and modeling for highly flexible electronics. To the best of our knowledge, the highest cutoff frequency (fT > 690 MHz) possible for strain‐engineered a‐IGZO TFTs is predicted in entirely flexible technologies that can be used to realize active transceivers operating in the MHz regime.

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“…The field-effect mobility plays a key role in the performance of field-effect transistors (FETs) [1]- [6], which is usually numerically extracted from FETs characteristics [7]- [9]. However, R C between source/drain electrodes and semiconductor layers, which may depend on gate voltage (V G ) [10], greatly has influenced the performance of FETs, and frequently leads to either underestimation or overestimation of μ FET [11]- [17].…”

Section: Introductionmentioning

confidence: 99%

Rapidly Measuring Charge Carrier Mobility of Organic Semiconductor Films Upon a Point-Contact Four-Probes Method

et al. 2019

IEEE J. Electron Devices Soc.

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Field-effect mobility (μ FET) of organic semiconductor films plays a key role in the performance of field-effect transistors (FETs). Numerical extraction of μ FET from organic FET characteristics is not only time-consuming due to patterning of source/drain electrodes, but also frequently unreliable because of the contact resistances (R C) between source/drain electrodes and semiconductors. Here, we propose an approach to rapidly evaluate μ by a point-contact four-probes method (μ PFP) for organic semiconductor films. Four tip-like probes quickly contact the semiconductor film surface directly, without deposition of the conventional source/drain electrodes, to simultaneously inject current and measure the electric potential. The charge density and thus conductance of the film is manipulated upon scanning gate voltage, from which the extraction of μ PFP , in good agreement with μ FET , could be realized in a few seconds. This method, with easily accessible setup and numerical model, substantially accelerates the evaluation of μ PFP , and thus could help screen materials and optimize film morphology for organic FETs applications. INDEX TERMS Organic semiconductor films, charge carrier mobility, point-contact four-probes method.

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Circular Structure for High Mechanical Bending Stability of a-IGZO TFTs

Cited by 30 publications

References 37 publications

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Recent Developments of Flexible InGaZnO Thin‐Film Transistors

Deformation‐induced stress/strain mapping and performance evaluation of a‐IGZO thin‐film transistors for flexible electronic applications

Rapidly Measuring Charge Carrier Mobility of Organic Semiconductor Films Upon a Point-Contact Four-Probes Method

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