Rapidly Measuring Charge Carrier Mobility of Organic Semiconductor Films Upon a Point-Contact Four-Probes Method

Abstract

Field-effect mobility (μ FET) of organic semiconductor films plays a key role in the performance of field-effect transistors (FETs). Numerical extraction of μ FET from organic FET characteristics is not only time-consuming due to patterning of source/drain electrodes, but also frequently unreliable because of the contact resistances (R C) between source/drain electrodes and semiconductors. Here, we propose an approach to rapidly evaluate μ by a point-contact four-probes method (μ PFP) for organic semiconductor films. Four tip-like probes quickly contact the semiconductor film surface directly, without deposition of the conventional source/drain electrodes, to simultaneously inject current and measure the electric potential. The charge density and thus conductance of the film is manipulated upon scanning gate voltage, from which the extraction of μ PFP , in good agreement with μ FET , could be realized in a few seconds. This method, with easily accessible setup and numerical model, substantially accelerates the evaluation of μ PFP , and thus could help screen materials and optimize film morphology for organic FETs applications. INDEX TERMS Organic semiconductor films, charge carrier mobility, point-contact four-probes method.

Insulating Electrets Converted from Organic Semiconductor for High‐Performance Transistors, Memories, and Artificial Synapses

“…The majority of trap sites are located on the SiO 2 surface, thus, insulating polymers like PS are used to shield these traps from the SiO 2 surface. [ 35 ] The interface between the semiconductor layer and the gate insulator plays a critically important role in the performance of OFETs, [ 36 ] and the presence of traps in SiO 2 leads to suboptimal OFET performance at the semiconductor/SiO 2 interface. Hence, C 8 ‐PTCDI (D)/C 8 ‐BTBT‐based OFETs (Figure S10d, Supporting Information) exhibit degraded electrical performance, with an on‐state current ( V gs = −60 V, V ds = −60 V) of the initial state measuring 2 × 10 −5 A, significantly lower than that of OFETs with FPS (Figure S10a–c, Supporting Information).…”

Особенности Применения Эвтектических Расплавов На Основе Индия И Галлия

“…Так, в работе [12] предложен метод оценки полевой подвижности носителей ( FET  ) для пленок органических полупроводников, играющей ключевую роль в характеристиках полевых транзисторов (см. рис.…”

In situ tuning of the performance of polymer field-effect transistors by soft plasma etching

“…7,8 A high SS with V th far away from 0 V makes low-voltage operation of OFETs difficult and leads to overestimated or underestimated mobility. 9,10 In addition, the traps, located in the semiconductor/ dielectric interface or semiconductor films, result in hysteresis, resulting in OFETs with poor operational stability. 11 Various approaches have been tried to reduce the SS and the V th of OFETs with improved stability, including using high-performance organic semiconductors 12,13 or doping.…”