Circuit simulator models for the diode and IGBT with full temperature dependent features

Palmer, P.R.; Santi, Enrico; Hudgins, J.L.; Kang, Xiaosong; Joyce, J.C.; Eng, P.

doi:10.1109/tpel.2003.816194

Cited by 136 publications

(55 citation statements)

References 10 publications

(6 reference statements)

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“…A geometrical split between the collector-emitter capacitance C CE and the gatecollector (Miller) capacitance C GC is often applied to C dep [29], [44].…”

Section: Discussionmentioning

confidence: 99%

“…The temperature dependencies of µ n , µ p , V T H and K p are relatively well-determined [29]. That of h p is less welldetermined; a discussion of this is given in appendix II.B.…”

Section: Temperature and Operating Condition Dependencymentioning

confidence: 98%

“…Temperature dependencies for µ n and µ p were taken from [29]; that for v sat was based on data in [31] and used a linear change of -10 4 cm.s…”

Section: Temperature and Operating Condition Dependencymentioning

confidence: 99%

See 2 more Smart Citations

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

181

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

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“…A geometrical split between the collector-emitter capacitance C CE and the gatecollector (Miller) capacitance C GC is often applied to C dep [29], [44].…”

Section: Discussionmentioning

confidence: 99%

“…The temperature dependencies of µ n , µ p , V T H and K p are relatively well-determined [29]. That of h p is less welldetermined; a discussion of this is given in appendix II.B.…”

Section: Temperature and Operating Condition Dependencymentioning

confidence: 98%

See 1 more Smart Citation

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

IEEE Trans. Power Electron.

181

View full text Add to dashboard Cite

show abstract

“…Due to the research in [14], this can still reflect a real trend. Hence, this is believed to be sufficient for this paper to be fully illustrative and factual.…”

Section: Setup Of the Experimentsmentioning

confidence: 98%

Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs

Wu¹,

Sun²,

Lin³

2014

Journal of Power Electronics

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This paper demonstrates the dynamic behaviors of paralleled high power IGBTs using trench and fieldstop technologies. Four IGBTs are paralleled and standard deviation is adopted to represent the imbalance. Experiments are conducted under three different operation conditions and at different temperatures ranging from -25°C to 125°C. The experimental results show that operation at very low and very high temperatures usually aggravates the switching behaviors. There is a trade-off between the balance and the losses at low temperatures. These results can help in the design of heat sinks in paralleling applications confronting very low temperatures.

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“…The first was proposed by Leturcq et al (Leturcq et al, 1997) using a series expansion of ADE based on Fourier transform where carrier distribution is implemented using a circuit with resistors and capacitors (RC network). This technique has been further developed and applied to several semiconductor devices in (Kang et al, 2002;Kang et al, 2003a;Kang et al, 2003b;Palmer et al, 2001;Santi et al, 2001;Wang et al, 2004). The second approach proposed by Araújo et al (Araújo et al, 1997) is based on the ADE solution through a variational formulation and simplex finite elements.…”

Section: Modeling Power Semiconductor Devicesmentioning

confidence: 99%