Circuit simulator models for the diode and IGBT with full temperature dependent features

Palmer, P.R.; Joyce, J.C.; Eng, P.; Hudgins, J.L.; Santi, Enrico; Dougal, Roger A.

doi:10.1109/pesc.2001.954442

Cited by 38 publications

(57 citation statements)

References 7 publications

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“…The model can be implemented in a circuit simulator such as PSpice, where the differential equations dp k /dt are represented as R-C cells [25]. The implementation adopted here uses MATLAB/Simulink, which takes advantage of MATLAB's matrix capabilities to produce a compact model [24].…”

Section: Model Implementationmentioning

confidence: 99%

“…This paper presents a compact physics-based model for the SiC PiN diode, using the Fourier series approach to model the stored charge [24], [25], that can be used to predict device and converter performance as part of device optimisation [26], [27]. The resulting simulations are compared to the experimental characteristics for the PiN diode given in [28].…”

Section: Introductionmentioning

confidence: 99%

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Physical modelling of large area 4H-SiC PiN diodes

Bryant

Jennings

Parker-Allotey

et al. 2009

2009 IEEE Energy Conversion Congress and Exposition

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The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 • C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area.

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Section: Model Implementationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Physical modelling of large area 4H-SiC PiN diodes

Bryant

Jennings

Parker-Allotey

et al. 2009

2009 IEEE Energy Conversion Congress and Exposition

Self Cite

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“…By series expansion of ADE, Leturcq et al [10] applied a methodology, based on Fourier transform, where carrier distribution is obtained through a series of RC networks, making an easy implementation into general circuit simulators. Based on this modelling approach some models have been developed with enhanced features like temperature effects [11,12]. Busatto et al [5] experienced the lumped-charge technique for IGBT modelling, including some effects such as depletion capacitances, advanced mobility, and separately handling of hole/electron fluxes for a better fitting to device physics.…”

Section: Introductionmentioning

confidence: 99%

A new approach for physical-based modelling of bipolar power semiconductor devices

Chibante

Araújo

Carvalho

2008

Solid-State Electronics

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“…One computationally-intensive approach is to simulate a physics-based diode model with a small time-step [1]. The switching losses losses can be obtained from the voltage and current waveforms of the device.…”

Section: Introductionmentioning

confidence: 99%

Modelling turn-off losses in power diodes

Schönberger

Feix

2008

2008 11th Workshop on Control and Modeling for Power Electronics

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In circuit simulations, calculating the turn-off switching loss in a power diode without modelling the reverse recovery current which causes the loss helps maintain good simulation speed. Ideal switches can be used and losses can be calculated or inferred from a lookup table after the switching transition. Difficulties arise with these approaches when circuit non-idealities cause the diode to commutate at zero current. The forward current before the initiation of turn-off must be known in order to determine the switching losses. This paper presents an analytical method for approximating the turn-off loss for an ideal diode model. Based on a regression to estimate the reverse recovery charge at the operating point, this method works for both ideal and non-ideal switching transitions. A low-pass filter is used to provide a finite value for the diode forward current in the event of a zero-current transition and the reverse recovery charge regression is modified to compensa te for the dynamics of the low-pass filter. The accuracy of turn-off losses calculated using this analytical approach is verifed by comparing the results against experimental measurements

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Circuit simulator models for the diode and IGBT with full temperature dependent features

Cited by 38 publications

References 7 publications

Physical modelling of large area 4H-SiC PiN diodes

Physical modelling of large area 4H-SiC PiN diodes

A new approach for physical-based modelling of bipolar power semiconductor devices

Modelling turn-off losses in power diodes

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