Circuit hot electron effect simulation

Aur, S.; Hocevar, D.E.; Yang, Ping

doi:10.1109/iedm.1987.191469

Cited by 38 publications

(11 citation statements)

References 2 publications

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“…Di(S(t)) dt (2) where D i is the degradation function for parameter Pi and S(t) is the stress function. For hot-carrier effects S(t) is the normalized substrate current/SUB.…”

Section: Api =mentioning

confidence: 99%

“…Early attempts on the quantitative analysis of circuit reliability have been reported [2], [3], [4], [5]. Aur et al [2] studied the reliability of the precharge circuitry for DRAM chips.…”

Section: Introductionmentioning

confidence: 99%

“…Aur et al [2] studied the reliability of the precharge circuitry for DRAM chips. Lee et al [4] calculated the effective age of transistors.…”

Section: Introductionmentioning

confidence: 99%

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Integrated-circuit reliability simulation with emphasis on hot-carrier effects

Hsu

Gowda

Sheu

1991

Analog Integr Circ Sig Process

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Reliability assurance and enhancement of analog VLSI circuits are of fundamental importance in the design of high quality signal processing and computing systems. An analog integrated circuit may fail due to degradation of some critical transistors. In this paper, strategies for use in a hierarchical reliability simulation environment covering various levels of VLSI circuit design are presented. Hot-carrier effects are used to demonstrate the prediction of degradation in circuit performance. This degradation information is propagated through the design hierarchy, with the data at each stage conforming with the complexity of representation at that stage. Circuit topology changes may be made at different levels to reduce the intensive electrical stress applied to weak components. At the top level the chip degradation information is essential for the design of reliable VLSI systems. The method used to include the first-order ac degradation effects into the circuit reliability simulator is described. Experimental results on inverters, precharging circuitry for sense amplifiers, and operational amplifiers designed in submicron technologies are presented.

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“…Di(S(t)) dt (2) where D i is the degradation function for parameter Pi and S(t) is the stress function. For hot-carrier effects S(t) is the normalized substrate current/SUB.…”

Section: Api =mentioning

confidence: 99%

“…Early attempts on the quantitative analysis of circuit reliability have been reported [2], [3], [4], [5]. Aur et al [2] studied the reliability of the precharge circuitry for DRAM chips.…”

Section: Introductionmentioning

confidence: 99%

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Integrated-circuit reliability simulation with emphasis on hot-carrier effects

Hsu

Gowda

Sheu

1991

Analog Integr Circ Sig Process

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“…Recently, several research institutes began working on the development of a reliability circuit simulator, i.e., a simulator that takes into account the reliability aspects of semiconductor devices [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

On the design of a reliability circuit simulator

Verweij

Lunenborg

1995

Microelectronics Reliability

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Abstract--This paper describes the outcome of a study into the feasibility of a reliability circuit simulator for ICs in general and the critical parameters involved in particular. The necessary conditions are formulated that have to be fulfilled before any construction of the reliability simulator is meaningful or can be done at all. It has been found that failure mechanisms in the wear-out regime meet these conditions. Next, a general approach is given to make a simulator. This approach is actually derived from circuit simulator activities on hot carrier degradation and electromigration, respectively. Finally, the different groups of parameters are defined.

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“…Initially, tools like HOTRON [Aur87], RELY [She89], and BERT [Tu93] were used to study the degradation effects caused by electro-migration and hot carrier mechanisms. The Berkeley Reliability Tools (BERT) is one of the famous tools used till today that is composed of a set of methods developed by Hu et al at the University of California Berkeley in the early 90's [Tu93].…”

Section: Simulation-tool Level Effortsmentioning

confidence: 99%

On improving dependability of analog and mixed-signal SoCs

Khan¹

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Circuit hot electron effect simulation

Cited by 38 publications

References 2 publications

Integrated-circuit reliability simulation with emphasis on hot-carrier effects

Integrated-circuit reliability simulation with emphasis on hot-carrier effects

On the design of a reliability circuit simulator

On improving dependability of analog and mixed-signal SoCs

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