Chemistry of hydrogen on diamond (100)

Yang, Yu-Chu; Struck, Lisa M.; Sutcu, L. F.; D'Evelyn, Mark P.

doi:10.1016/0040-6090(93)90156-j

Cited by 64 publications

(19 citation statements)

References 56 publications

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“…The activation energy E H for H desorption agrees with that obtained by Schulberg, Kubiak, and Stulen 16 but is much lower than the 3.2 eV given by Thomas, Rudder, and Markunas 17 or the 3.5 eV by Yang et al 18 Nishimori et al 31 measured the desorption yield of H ions from a diamond ͑100͒ surface as a function of temperature and obtained an activation energy of 0.8 eV. Most of the high values for E H are obtained by fitting experimental data using a fixed H of about 10 13 sec Ϫ1 .…”

Section: ͑7͒supporting

confidence: 87%

“…͑iv͒ Last but not least, we utilize a reliable method to measure the true temperature of the diamond sample with an accuracy of Ϯ10 K. In conjunction with the comparison mentioned under ͑ii͒ this turns out to be crucial in the attempt to sort out some of the contradictions concerning the kinetics of hydrogen desorption and reconstruction that have recently been recorded. [15][16][17][18][19][20] …”

Section: Introductionmentioning

confidence: 99%

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Dehydrogenation and the surface phase transition on diamond (111): Kinetics and electronic structure

1999

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The (1ϫ1) to (2ϫ1) surface phase transition of the hydrogen-covered diamond ͑111͒ surface is investigated by core level spectroscopy, low-energy electron diffraction, and measurements of the electron affinity. The latter method is shown to be a reliable measure of the hydrogen coverage. Prolonged annealing of the surface at 1000 K converts the hydrogen-terminated (1ϫ1) structure with an electron affinity of Ϫ1.27 eV to a hydrogen-free (2ϫ1) reconstruction, increases the separation of valence-band maximum from the Fermi level E F from 0.68 to 0.88 eV, and results in a positive electron affinity of ϩ0.38 eV. Annealing the surface at high temperature ͑up to 1400 K͒ yields the same (2ϫ1) surface structure albeit with an increase in the separation of the valence-band maximum from E F to 1.42 eV and a positive electron affinity of 0.8 eV which is associated with a partial surface graphitization. An analysis of the kinetics of the thermally induced hydrogen desorption yields an activation energy of 1.25Ϯ0.2 eV. It was found that hydrogen desorption and reconstruction are surface phase transitions which are not directly linked. Instead, an intermediate phase with a high concentration of dangling bonds ͑up to 70%͒ is observed. The (1ϫ1) to (2ϫ1) phase transition is phenomenologically well described by a first-order transition provided a critical density of dangling bonds of about 70% is included in the analysis in such a way that the rate constant for reconstruction vanishes below that value. ͓S0163-1829͑99͒10407-7͔

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Section: ͑7͒supporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Dehydrogenation and the surface phase transition on diamond (111): Kinetics and electronic structure

1999

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“…͑N, O, and other species are often present as well, and can significantly affect growth behavior, 5,20,31-33 but are not considered here.͒ Under typical growth conditions, the diamond surface is largely covered by a passivating layer of H atoms. [34][35][36] Surface sites can be activated by either H desorption or abstraction. Once a diamond surface site is active, it can be repassivated by either a H atom or a hydrocarbon molecule.…”

Section: Methodsmentioning

confidence: 99%

A kinetic Monte Carlo method for the atomic-scale simulation of chemical vapor deposition: Application to diamond

Battaile

Srolovitz

Butler

1997

Journal of Applied Physics

130

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We present a method for simulating the chemical vapor deposition (CVD) of thin films. The model is based upon a three-dimensional representation of film growth on the atomic scale that incorporates the effects of surface atomic structure and morphology. Film growth is simulated on lattice. The temporal evolution of the film during growth is examined on the atomic scale by a Monte Carlo technique parameterized by the rates of the important surface chemical reactions. The approach is similar to the N-fold way in that one reaction occurs at each simulation step, and the time increment between reaction events is variable. As an example of the application of the simulation technique, the growth of {111}-oriented diamond films was simulated for fifteen substrate temperatures ranging from 800 to 1500 K. Film growth rates and incorporated vacancy and H atom concentrations were computed at each temperature. Under typical CVD conditions, the simulated growth rates vary from about 0.1 to 0.8 μm/hr between 800 and 1500 K and the activation energy for growth on the {111}: H surface between 800 and 1100 K is 11.3 kcal/mol. The simulations predict that the concentrations of incorporated point defects are low at substrate temperatures below 1300 K, but become significant above this temperature. If the ratio between growth rate and point defect concentration is used as a measure of growth efficiency, ideal substrate temperatures for the growth of {111}-oriented diamond films are in the vicinity of 1100 to 1200 K.

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“…The occurrence of C(100) 1 × 1:2H (Fig. 4a) surfaces is prevented by steric hindrance; rather mixed 1 × 1:2H and 2 × 1:H surfaces are to be expected [23].…”

Section: 1mentioning

confidence: 99%

Diamond‐based DNA sensors: surface functionalization and read‐out strategies

Wenmackers

Vermeeren

vandeVen

et al. 2009

Physica Status Solidi (a)

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This article reviews the current state‐of‐the art of diamond‐based DNA sensors. Some general concepts involved in biosensors are introduced and applied to DNA sensors. The properties of chemically vapor deposited (CVD) diamond relevant for this application are summed up, with special attention for the stability and bio‐compatibility of the material. Several routes to functionalize the diamond surface are considered. The physical properties of the obtained DNA layers are discussed in terms of surface density and molecular conformation. Possible read‐out strategies are evaluated, including optical and electronic sensing. With diamond‐based DNA sensors, real‐time and label‐free sensing is achieved. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Chemistry of hydrogen on diamond (100)

Cited by 64 publications

References 56 publications

Dehydrogenation and the surface phase transition on diamond (111): Kinetics and electronic structure

Dehydrogenation and the surface phase transition on diamond (111): Kinetics and electronic structure

A kinetic Monte Carlo method for the atomic-scale simulation of chemical vapor deposition: Application to diamond

Diamond‐based DNA sensors: surface functionalization and read‐out strategies

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