ChemInform Abstract: INHOMOGENITAET FILMFOERMIGER BETA‐SIC‐EINKRISTALLE

Characterization of defects in 3C-silicon carbide crystals

“…3C-SiC crystals grown by this method had been studied by X-ray topography before [10,11], and a variety of defects were reported to occur in a range of densities, among which were stacking faults, extensive lamellar twinning, dislocations, and inclusions. The specimens studied here have lower defect densities and higher crystallinities, yet a single lamellar twin was always present on the ð % 1 % 1 % 1Þ carbon face of the platelets.…”

“…It is easy to mistake stacking fault F 1 for a growth sector boundary, as it is near the position of what might be the largest growth sector boundary in the crystal, but it is not. Avizova et al [11] showed topographs in which growth sector boundaries were the most prominent features, but in the crystals we examined, the contrast of growth sector boundaries, when such contrast was visible, was subtle. Contrast at the surface intersections of growth sector boundaries sometimes appeared; the lines marked G in Fig.…”

“…Platy Baikov 3C-SiC crystals have been previously studied with X-ray topography by Aivazova et al [10,11]; their published topographs suggested fairly high strain levels. Half of the eight crystals we possessed gave dark topographs indicating similar strain levels.…”