Characterization of defects in 3C-silicon carbide crystals

Raman spectra of silicon carbide small particles and nanowires

“…The LO and TO Raman bands of SiC change their shapes with temperature, pressure, crystal size, defects character and concentration. In silicon carbide twins, dislocations, and inclusions have been observed, but the most common defects are stacking faults [29]. The size dependence of band position has been observed for many materials and is often used to evaluate crystal size [4,30].…”

The Piezoresistive Effect of SiC for MEMS Sensors at High Temperatures: A Review

“…Another parameter which needs to be considered is the influence of crystal defects on the piezoresistance of 3C-SiC grown on a Si substrate, since the thermal mismatch and different lattice constants usually lead to the appearance of stacking faults and microtwins at the 3C-SiC/Si interface [75]. These defects degrade the electrical properties of the crystal and therefore could affect the piezoresistance of 3C-SiC [76], [77].…”

High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces

“…A few groups have attempted to grow by chemical vapor deposition (CVD) either self-nucleated 3C-SiC crystals on a graphite susceptor or large area free-standing 3C-SiC wafers by heteroepitaxy on “undulant-Si (001)” substrates . In the first case, crystals of very high structural quality were obtained, but the size, about several millimeters in diameter, was not compatible with the applications. In the second case, up to 6-in.-diameter free-standing wafers have been demonstrated, but the crystals still contain too many structural defects that are intrinsically related to the heteroepitaxial SiC/Si system .…”