Raman spectra of silicon carbide small particles and nanowires

Wieligor, Monika; Wang, Yuejian; Żerda, T. W.

doi:10.1088/0953-8984/17/15/010

Cited by 68 publications

(59 citation statements)

References 31 publications

(55 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5b. The peaks at 789.4 and 966.8 cm -1 are in agreement with the β-SiC polytype [45]. The two peaks are attributed to the transverse optical (TO) and axial acoustic mode (LA), respectively.…”

Section: Phase and Microstructure Characterization Of Sic Fiberssupporting

confidence: 68%

In-situ growth and characterization of SiC fibers during Si vapor infiltration process without catalysis

Li¹,

Wang

Cheng³

et al. 2016

Ceramics International

View full text Add to dashboard Cite

Section: Phase and Microstructure Characterization Of Sic Fiberssupporting

confidence: 68%

In-situ growth and characterization of SiC fibers during Si vapor infiltration process without catalysis

Li¹,

Wang

Cheng³

et al. 2016

Ceramics International

View full text Add to dashboard Cite

“…In previous papers, the defects present correlate to peaks centered near 840 and 860 cm -1 in optical phonon Raman spectra. [13,14] We show in the present work that the intensity ratio between the longitudinal optical (LO) and transverse optical (TO) modes must also be taken into account. In order to locally probe the defects of a SiC NW, we use a new method that permits the study of a single NW by attaching it to the apex of a tungsten tip that is coated with a thin gold layer.…”

Section: Introductionmentioning

confidence: 90%

A Raman Spectroscopy Study of Individual SiC Nanowires

Bechelany¹,

Brioude²,

Cornu³

et al. 2007

Adv Funct Materials

171

117

View full text Add to dashboard Cite

Raman spectroscopy of a single 40 nm 3C‐SiC nanowire (NW) has been achieved at room temperature with the use of surface‐enhanced Raman scattering (SERS). The structure used to enhance the Raman scattering process is based on a tungsten tip covered by a thin gold layer; a NW is attached to the apex of this tip. The specific dimensions of the SiC NWs (diameters are a few tens of nanometers and lengths are a few micrometers) allow us to study several parts of an individual NW according to the lateral resolution of the Raman microspectrometer. High‐resolution transmission electron microscopy (HRTEM) images show both atomic arrangements in the SiC NWs with growth predominantly in the [111] direction and abundant structural defects. Effort has been focused on the correlation between the Raman spectroscopic profiles and the structural deformations. The Fano interference features of the sharp phonon lines have been used to evaluate the free carrier concentration.

show abstract

“…The G band originates from the stretching vibrations in the basal plane of ideal graphite, and a combination of D and G bands is generally regarded as an indication of polycrystalline graphitic structures [7]. The Raman spectrum also shows weak peaks at positions near 500 cm [12,13,14,15] . However for this sample the A 1 peak is very minute.…”

Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 99%

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali

Theron

Auret

et al. 2014

Journal of Nuclear Materials

View full text Add to dashboard Cite

A thin film of ruthenium(Ru) was deposited on n-type 4H-SiC and 6H-SiC by electron beam deposition technique so as to study interface reaction of ruthenium with silicon carbide at various annealing temperatures, and in two annealing environments namely vacuum and air. The Ru-4H-SiC and Ru-6H-SiC films were both annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C, and the second set of samples were also annealed in air for temperatures ranging from 100 o C to 600 o C. After each annealing temperature, the films were analysed by Rutherford Backscattering spectrometry (RBS). Raman analysis and x-ray diffraction analysis were also used to analyse some of the samples. RBS analysis of 4H-SiC annealed in a vacuum showed evidence of formation of ruthenium silicide (Ru 2 Si 3 ) and diffusion of Ru into SiC starting from annealing temperature of 700 o C going upwards. In the case of Ru-6H-SiC annealed in a vacuum, RBS analysis showed formation of Ru 2 Si 3 at 600 o C, in addition to the diffusion of Ru into SiC at 800 o C . Raman analysis of the Ru-4H-SiC and Ru-6H-SiC samples that were annealed in a vacuum at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . As for the samples annealed in air ruthenium oxidation started at a temperature of 400 o C and diffusion of Ru into SiC commenced at temperatures of 500 o C for both Ru-4H-SiC and Ru-6H-SiC. X-ray diffraction analysis of samples annealed in air at 600 o C showed evidence of formation of ruthenium silicide in both 4H and 6H-SiC but this was not corroborated by RBS analysis.

show abstract

Raman spectra of silicon carbide small particles and nanowires

Cited by 68 publications

References 31 publications

In-situ growth and characterization of SiC fibers during Si vapor infiltration process without catalysis

In-situ growth and characterization of SiC fibers during Si vapor infiltration process without catalysis

A Raman Spectroscopy Study of Individual SiC Nanowires

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Contact Info

Product

Resources

About