The defect formation process in dislocation free Czochralski silicon crystals after annealing at 1000 °C is studied by infrared absorption method, X‐ray topography, and transmission electron microscopy. Crystals: as‐grown, preliminary treated at 700 °C for 2 h or irradiated with fast pile neutrons (Φ ≈ 1019 neutrons/cm2) are used for investigations. Evidence is obtained concerning the generation and evolution of defects. Correlation between the defect concentration and the changing of interstitial oxygen content in silicon crystals is established. The oxygen precipitation process is shown to be accelerated essentially in fast pile neutrons irradiated crystals.
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