Chemically vapour deposited diamond coatings on cemented tungsten carbides: Substrate pretreatments, adhesion and cutting performance

Polini, Riccardo

doi:10.1016/j.tsf.2005.12.042

Cited by 122 publications

(40 citation statements)

References 48 publications

(34 reference statements)

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“…The formation the  phase can be ascribed to the 'local' carbon deficiency in the WC-Co, due to the precipitation of C from WC at high temperature (Eq. 1) [48][49].  phase can exist in both M6C and M12C forms.…”

Section: Analysis Of Phase Transformationsmentioning

confidence: 99%

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

Barletta¹,

Rubino²,

Gisario³

2011

Applied Surface Science

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Abstract.The use of a continuous wave-high power diode laser for removing surface Co-binder from Cocemented tungsten carbide (WC-Co (5.8 % wt.)) hardmetal slabs was investigated. Combined scanning electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction analyses were performed in order to study the phase transformations and micro-structural modifications of the WC-Co substrates occurring during and after laser irradiation. The micro-structure of the WCCo progressively transforms as energy density increased, exhibiting stronger removal of Co and WC grain growth. At very high energy density, local melting of the WC grains with the formation of big agglomerates of interlaced grains is observed, and the crystalline structure of the irradiated substrate shows the presence of a brittle ternary eutectic phase of W, Co and C (often referred to as the -phase). The latter can be detrimental to the mechanical properties of WC-Co. Therefore, the proper adjustment of the laser processing parameters plays a crucial role in surface treatments of WC-Co substrates prior to post-processing like diamond deposition.

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Section: Analysis Of Phase Transformationsmentioning

confidence: 99%

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

Barletta¹,

Rubino²,

Gisario³

2011

Applied Surface Science

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“…Diamond coatings on cemented carbide tools, owing to low friction coefficient, high strength and wear resistance, are of great interest for treatment of advanced materials [1,2].…”

Section: Introductionmentioning

confidence: 99%

Plateholder design for deposition of uniform diamond coatings on WC-Co substrates by microwave plasma CVD for efficient turning application

Ashkihazi

Седов

Sovyk

et al. 2017

Diamond and Related Materials

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“…Co-cemented tungsten carbide (WC-Co) was considered the ideal substrate material for producing diamond coated tools [1][2][3]. However, poor adhesion of film/substrate was the main obstacle in the useful application of diamond films as wear-resistant coatings for carbide tools.…”

Section: Introductionmentioning

confidence: 99%

Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate

et al. 2016

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Silicon-doped (Si-doped) diamond films were deposited on a Co-cemented tungsten carbide (WC-Co) substrate using the hot filament chemical vapor deposition (HFCVD) method with a mixture of acetone, tetraethoxysilane (TEOS), and hydrogen as the recant source. The as-deposited doped diamond films were characterized with field emission scanning electron microscopy (FE-SEM), Raman spectrum, and X-ray diffraction (XRD). Furthermore, Rockwell C indentation tests were conducted to evaluate the adhesion of the Si-doped diamond films grown on the WC-Co substrate. The results demonstrated that the silicon concentration in the reactant source played an important role in the surface morphology and adhesion of diamond films. The size of diamond grain varied from 3 µm to 500 nm with silicon concentration increasing from 0 to 1.41 atom %. When the silicon concentration rose to 1.81 atom %, the grain size became bigger than that of the lower concentration. The ratio of diamond peak {220}/{111} varied with different silicon concentrations. Raman study features revealed high purity of as-deposited diamond films. The Raman spectra also demonstrated the presence of silicon in the diamond films with Si-Si, Si-C and Si-O bonds. Si-doped diamond films with strong adhesive strength on the WC-Co substrate was beneficial for diamond films applied on cutting tools and wear resistance components.

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Chemically vapour deposited diamond coatings on cemented tungsten carbides: Substrate pretreatments, adhesion and cutting performance

Cited by 122 publications

References 48 publications

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

Co removal and phase transformations during high power diode laser irradiation of cemented carbide

Plateholder design for deposition of uniform diamond coatings on WC-Co substrates by microwave plasma CVD for efficient turning application

Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate

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