2016
DOI: 10.3390/coatings6030039
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Deposition and Characterization of Si-Doped Diamond Films Using Tetraethoxysilane onto a WC-Co Substrate

Abstract: Silicon-doped (Si-doped) diamond films were deposited on a Co-cemented tungsten carbide (WC-Co) substrate using the hot filament chemical vapor deposition (HFCVD) method with a mixture of acetone, tetraethoxysilane (TEOS), and hydrogen as the recant source. The as-deposited doped diamond films were characterized with field emission scanning electron microscopy (FE-SEM), Raman spectrum, and X-ray diffraction (XRD). Furthermore, Rockwell C indentation tests were conducted to evaluate the adhesion of the Si-doped… Show more

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Cited by 4 publications
(3 citation statements)
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“…Samples were commercial plastic components made from polycarbonate. The samples were made by injection moulding, and the surface of each sample was approximately 200 cm 2 . Several samples were cut into small pieces with a surface area of approximately 1-2 cm 2 to enable characterisation.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Samples were commercial plastic components made from polycarbonate. The samples were made by injection moulding, and the surface of each sample was approximately 200 cm 2 . Several samples were cut into small pieces with a surface area of approximately 1-2 cm 2 to enable characterisation.…”
Section: Methodsmentioning
confidence: 99%
“…For the deposition of Si-containing films, various precursors can be used [2][3][4], one of the most popular of which is hexamethyldisiloxane (HMDSO). It is used for the deposition of various coatings ranging from polymers to almost pure SiO x films [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…QCM is an extremely sensitive mass device. The QCM provides information about the mass change (Δm) on the substrate as a function of frequency variation (Δf ) [47].…”
Section: Pecvd Of Sio X -Filmsmentioning
confidence: 99%