Chemically Amplified Molecular Glass Photoresist Regulated by 2-Aminoanthracene Additive for Electron Beam Lithography and Extreme Ultraviolet Lithography

Abstract

2-Aminoanthracene was used as a nucleophilic additive in a molecular glass photoresist, bisphenol A derivative (BPA-6-epoxy), to improve advanced lithography performance. The effect of 2-aminoanthracene on BPA-6-epoxy was studied by electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL). The result indicates that the additive can optimize the pattern outline by regulating epoxy cross-linking reaction, avoiding photoresist footing effectively in EBL. The EUVL result demonstrates that 2-aminoanthracene can significantly reduce line width roughness (LWR) for HP (Half-Pitch) 25 nm (from 4.9 to 3.8 nm) and HP 22 nm (from 6.9 to 3.0 nm). The power spectrum density (PSD) curve further confirms the reduction of roughness at medium and high frequency for HP 25 nm and the whole range of frequency for HP 22 nm, respectively. The study offers useful guidelines to improve the roughness of a chemically amplified molecular glass photoresist with epoxy groups for electron beam lithography and extreme ultraviolet lithography.

Manipulating the Interfacial Dipole Toward High-Performance Perovskite Solar Cells via Conjugated Organic Ammonium

“…2-Aminoanthracene is an organic base with a unique structure, having the amine group lying on the ring of anthracene, which has been widely used for ultraviolet absorbing tags, fluorescent chemosensors, heavy metal absorbents, and so on. − We are motivated to use AAI, the chemical structure of which is shown in Figure S1, as a surface treatment in the formamidinium (FA)-base mixed perovskite due to its excellent electronic and chemical properties. The dihedral angle between the plane of the AAI molecule and the plane of the three-dimensional (3D) perovskite, which is referred to as the tilt angle, is crucial for the interaction energy between the passivation modulator and the perovskite, and also the surface energy level modification.…”

A novel non-chemically amplified resist based on polystyrene-iodonium derivatives for electron beam lithography

“…The traditional CARs, due to their dependence on the acid diffusion process, lead to a large ledge roughness (LER) of the lithographic pattern, which limits the improvement of resolution [11]. Some work has proposed that the additives such as acid diffusion inhibitor and photodegradable nucleophiles can be added into the resists to improve the roughness [12,13]. The CARs may have some challenges to meet the demand of the semiconductor industry, especially for the next generation of sub-10 nm nanolithography [11,14].…”

Exceptional Lithography Sensitivity Boosted by Hexafluoroisopropanols in Photoresists

“…Yang's team [35,36] developed a chemically amplified photoresist by modifying the number of leaving groups to adjust its sensitivity to 52 µC cm −2 . Numerous studies [10,37,38] have reported electron beam exposure doses of 10 µC/cm −2 or more for photoresists, with commercially available photoresists requiring as high as several hundred to thousands of µC cm −2 exposure doses [39][40][41].…”