Chemical vapour deposition of boron carbides I: Phase and chemical composition

Jansson, Ulf; Carlsson, Jan‐Otto; Stridh, Bengt; Söderberg, Staffan; Olsson, Mikael

doi:10.1016/0040-6090(89)90120-x

Cited by 56 publications

(44 citation statements)

References 11 publications

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“…[6,7,8,9,10,11] The use of a chlorinated chemistry produces a very corrosive environment in the reactor which is detrimental for most metallic substrates, such as aluminum. Moreover, Al has a relatively low melting point of 660 °C.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Pedersen

Höglund

Birch

et al. 2012

Chemical Vapor Deposition

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Abstract:Thin, amorphous boron-carbon films were deposited at low temperature (400-600 °C) by thermally activated CVD using the organoborane triethylboron (TEB) as a single precursor. Two different carrier gases were tested. At 600 °C using argon as carrier gas the deposition rate was close to 1 µm/h. The film had a density of 2.14 g/cm 3 with a B/C-ratio of 3.7. When hydrogen was used as carrier gas the film density was 2.42 g/cm 3 , the B/C ratio 4.6 and the deposition rate 0.35 µm/h. The hydrogen content in the films was about 3-4 at%, regardless of deposition ambient and varied only with the deposition temperature. In addition, both the film composition and the film density were found to vary significantly with the deposition temperature and the deposition ambient. Based upon these results, a deposition mechanism for the growth of boroncarbon films from TEB, where the TEB molecule is decomposed to BH 3 and hydrocarbons, is suggested.

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Section: Introductionmentioning

confidence: 99%

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Pedersen

Höglund

Birch

et al. 2012

Chemical Vapor Deposition

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“…Both dichloroborane and boron carbide formation rates were found to increase with an increase in the inlet molar fraction of BCl 3 . However no effect on the formation rate of dichloroborane was observed while the formation rate of boron carbide increased with an increase in the inlet molar fraction of CH 4 . There are a few published information related to the mechanism of CVD of boron carbide, which are not conclusive.…”

Section: Introductionmentioning

confidence: 55%

“…[4][5][6] Most of the previous studies on the CVD of boron carbide consider only the morphology of the deposited products. 4,5,[7][8][9] thickness measurement of the deposits divided by the deposition time.…”

Section: Introductionmentioning

confidence: 99%

“…10,11 Vandenbulcke 6 deposited boron carbide from BCl 3 -CH 4 -H 2 mixture by using a stagnation flow technique in a cold wall reactor. A mass transfer equilibrium model was developed and this model was compared with the deposition rates and the solid compositions.…”

Section: Introductionmentioning

confidence: 99%

“…4 The deposition processes are carried out in excess hydrogen and the most commonly used boron and carbon precursors are BCl 3 and CH 4 . [4][5][6] Most of the previous studies on the CVD of boron carbide consider only the morphology of the deposited products. 4,5,[7][8][9] thickness measurement of the deposits divided by the deposition time.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism studies on CVD of boron carbide from a gas mixture of BCL₃, CH₄, and H₂ in a dual impinging‐jet reactor

et al. 2009

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in Wiley InterScience (www.interscience.wiley.com).Nearly pure boron carbide free from impurities was produced on a tungsten substrate in a dual impinging-jet chemical vapor deposition reactor from a BCl 3 , CH 4 , and H 2 mixture. The Fourier Transform Infrared (FTIR) analysis proved the formation of reaction intermediate BHCl 2 , which is proposed to occur mainly in the gaseous boundary layer next to the substrate surface. Among a large number of reaction mechanisms proposed only the ones considering the molecular adsorption of boron carbide on the substrate surface gave reasonable fits. In the proposed mechanism dichloroborane is formed in the gas phase only as a by-product. Boron carbide, on the other hand, is formed through a series of surface reactions involving adsorbed boron trichloride, adsorbed methane and gas phase hydrogen. The simultaneous fit of the experimental rate data to the model expressions gave correlation coefficient values of 0.977 and 0.948, in predicting the B 4 C and BHCl 2 formation rates, respectively. 2009 American Institute of Chemical Engineers AIChE J, 55: 701-709, 2009

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Effect of Temperature Field on Deposition of Boron Carbide Coating form BCl ₃ ‐CH ₄ ‐H ₂ System

Liu

Zhang

Cheng

et al. 2010

Ceramic Transactions Series

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Chemical vapour deposition of boron carbides I: Phase and chemical composition

Cited by 56 publications

References 11 publications

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Mechanism studies on CVD of boron carbide from a gas mixture of BCL₃, CH₄, and H₂ in a dual impinging‐jet reactor

Effect of Temperature Field on Deposition of Boron Carbide Coating form BCl ₃ ‐CH ₄ ‐H ₂ System

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Chemical vapour deposition of boron carbides I: Phase and chemical composition

Cited by 56 publications

References 11 publications

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Mechanism studies on CVD of boron carbide from a gas mixture of BCL3, CH4, and H2 in a dual impinging‐jet reactor

Effect of Temperature Field on Deposition of Boron Carbide Coating form BCl 3 ‐CH 4 ‐H 2 System

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Mechanism studies on CVD of boron carbide from a gas mixture of BCL₃, CH₄, and H₂ in a dual impinging‐jet reactor

Effect of Temperature Field on Deposition of Boron Carbide Coating form BCl ₃ ‐CH ₄ ‐H ₂ System