Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films

Green, M. L.; Gross, M. E.; Papa, Letizia; Schnoes, K. J.; Brasen, D.

doi:10.1149/1.2113647

Cited by 236 publications

(96 citation statements)

References 10 publications

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“…In passing, it was noted that a certain growth rate (roughly 0.05 nm min −1 ) of TiO 2 films was necessary to suppress the desorption of RuO 2 . When this growth rate was not reached, the Ru substrate was actually etched away through a disproportionation reaction (2RuO 2 → Ru + RuO 4 ) 55. This severely interferes with any oxide film growth on a Ru electrode using O 3 as the oxygen source.…”

Section: Resultsmentioning

confidence: 99%

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

Kim

Lee

Han

et al. 2010

Adv Funct Materials

207

144

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The recent progress in the metal‐insulator‐metal (MIM) capacitor technology is reviewed in terms of the materials and processes mostly for dynamic random access memory (DRAM) applications. As TiN/ZrO2‐Al2O3‐ZrO2/TiN (ZAZ) type DRAM capacitors approach their technical limits, there has been renewed interest in the perovskite SrTiO3, which has a dielectric constant of >100, even at a thickness ∼10 nm. However, there are many technical challenges to overcome before this type of MIM capacitor can be used in mass‐production compatible processes despite the large advancements in atomic layer deposition (ALD) technology over the past decade. In the mean time, rutile structure TiO2 and Al‐doped TiO2 films might find space to fill the gap between ZAZ and SrTiO3 MIM capacitors due to their exceptionally high dielectric constant among binary oxides. Achieving a uniform and dense rutile structure is the key technology for the TiO2‐based dielectrics, which depends on having a dense, uniform and smooth RuO2 layer as bottom electrode. Although the Ru (and RuO2) layers grown by ALD using metal‐organic precursors are promising, recent technological breakthroughs using the RuO4 precursor made a thin, uniform, and denser Ru and RuO2 layer on a TiN electrode. A minimum equivalent oxide thickness as small as 0.45 nm with a low enough leakage current was confirmed, even in laboratory scale experiments. The bulk dielectric constant of ALD SrTiO3 films, grown at 370 °C, was ∼150 even with thicknesses ≤15 nm. The recent development of novel group II precursors made it possible to increase the growth rate largely while leaving the electrical properties of the ALD SrTiO3 film intact. This is an important advancement toward the commercial applications of these MIM capacitors to DRAM as well as to other fields, where an extremely high capacitor density and three‐dimensional structures are necessary.

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Section: Resultsmentioning

confidence: 99%

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

Kim

Lee

Han

et al. 2010

Adv Funct Materials

207

144

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“…Titanium substrates were attached to a titanium rod by spot welding for dip coating. The substrate was then fully immersed into the precursor Application Pulsed laser deposition [14] Sputtering [15] Metal organic CVD [16][17][18] RF magnetron sputtering [19] Sol-gel [9,[20][21][22] Electrodeposition [23][24][25] Spray pyrolysis [26] Rapid thermal decomposition [27] Adams fusion method [28] Precursor solution Polyol method [28] Pechini method-Polymeric precursor [11,12,29] solution and withdrawn at a constant rate of 0.18 m min -1 . Spin coated samples were prepared by using a Laurells WS-400A-6NPP/LITE single wafer spin coater.…”

Section: Wet Film Applicationmentioning

confidence: 99%

Wet film application techniques and their effects on the stability of RuO2–TiO2 coated titanium anodes

Shrivastava

Moats

2008

J Appl Electrochem

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The effect of wet film application techniques on the physical and electrochemical properties and operational stability of RuO 2 -TiO 2 coated titanium anodes was evaluated. Four compositions of RuO 2 -TiO 2 coatings were applied to Ti substrates by three different wet coating methods-brush, dip and spin. Changing the coating technique resulted in different morphologies. Electrochemically active surface area of the coatings was related to the morphology. A shift in Ru(III)/Ru(IV) oxidation potential occurred upon changing the application technique. For lower ruthenium content coatings, this shift was related to coating lifetime. Anode stability in accelerated lifetesting showed that dip coated samples lasted up to three times longer than brush coated samples for lower ruthenium content.

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“…[3][4][5][6] In addition, well-aligned hexagonal close-packed Ru crystals [c-axis (002)] enable dielectric layers such as (Ba,Sr)TiO 3 (BST) to grow epitaxially. [3][4][5][6] In addition, well-aligned hexagonal close-packed Ru crystals [c-axis (002)] enable dielectric layers such as (Ba,Sr)TiO 3 (BST) to grow epitaxially.…”

Section: Introductionmentioning

confidence: 99%

Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition

Park¹,

Lee²,

Park³

et al. 2012

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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Ruthenium thin films were deposited on argon plasma-treated SiO 2 and untreated SiO 2 substrates by remote plasma atomic layer deposition using bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp) 2 ] as a Ru precursor and ammonia plasma as a reactant. The results of in situ Auger electron spectroscopy (AES) analysis indicate that the initial transient region of Ru deposition was decreased by Ar plasma treatment at 400 C, but did not change significantly at 300 C. The deposition rate exhibited linearity after continuous film formation and the deposition rates were about 1.7 Å /cycle and 0.4 Å /cycle at 400 C and 300 C, respectively. Changes of surface energy and polar and dispersive components were measured by the sessile drop test. The quantity of surface amine groups was measured from the surface nitrogen concentration with AES. Furthermore, the Ar plasma-treated SiO 2 contained more amine groups and less hydroxyl groups on the surface than on untreated SiO 2 . Auger spectra exhibited chemical shifts by Ru-O bonding, and larger shifts were observed on untreated substrates due to the strong adhesion of Ru films.

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Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films

Cited by 236 publications

References 10 publications

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

Wet film application techniques and their effects on the stability of RuO2–TiO2 coated titanium anodes

Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition

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