Chemical vapor deposition of graphene on large-domain ultra-flat copper

Dhingra, Shonali; Hsu, Jen‐Feng; Vlassiouk, Ivan; D’Urso, Brian

doi:10.1016/j.carbon.2013.12.014

Cited by 55 publications

(39 citation statements)

References 42 publications

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“…We investigate WAL via magnetotransport measurements as a function of carrier density and temperature. We will restrict our focus to transport in the graphene, which is electrically isolated from the LaAlO 3 /SrTiO 3 interface.Graphene samples used in this work are synthesized using atmospheric pressure chemical vapor deposition (APCVD) growth method [44] on ultra-flat Cu wafers [45] and subsequently transferred onto prepatterned LaAlO 3 /SrTiO 3 substrates. Following transfer, deep-UV lithography and oxygen plasma cleaning processes selectively remove unwanted graphene.…”

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confidence: 99%

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Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

et al. 2017

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2Weak localization (WL) and weak antilocalization (WAL) are quantum interference effects [1][2][3][4] resulting from electron phase coherence and spin-orbit interactions in 2-dimensional (2D) electron systems. WL results from constructive interference between pairs of time-reversed closed-loop electron trajectories and provides a positive correction to the Drude resistivity. [2, 4] Spin-orbit coupling (SOC) leads to suppressed backscattering due to destructive interference, leading to WAL and a negative correction to the Drude resistivity.[3]The intrinsic SOC of graphene is weak; [5] however, charge carriers in graphene possess a pseudospin degree of freedom, which arises from the degeneracy introduced by the two inequivalent atomic sites per unit cell in the graphene honeycomb lattice being comprised of A and B sublattices[ Figure 1(a) and (b)]. [6, 7] Recent discovery of unique quantum transport phenomena in graphene, such as unconventional half-integer quantum Hall effect [7, 8] and Klein tunneling [9][10][11] is a direct consequence of non-trivial Berry phase of ! induced by pseudospin rotation. Pseudospin in graphene can be utilized to store and manipulate information, which is analogous to the spin degree of freedom in spintronics. [12][13][14][15][16] Because of pseudospin rotation, each scattering process has a phase difference of ! between two time reversal pair in a closed quantum diffusive path. This results in destructive interference that suppresses backscattering, leading to WAL in graphene, which is analogous to the role of SOC (Figure 1(c) and (d)) in ordinary semiconductors. WAL is theoretically expected in graphene in the absence of inter-valley and chirality breaking scattering. [17] Most studies have not presented clear evidence of WAL via negative magnetoconductance, [18][19][20][21][22] most likely due to presence of point defects in graphene samples that locally break the sublattice degeneracy and smooth out !-phase contribution. Experimental signatures of WAL observed in high-quality epitaxial graphene samples are attributed to suppressed point defects.[23]Interestingly, a WL to WAL transition is achieved in high quality exfoliated samples [24] by decreasing the ratio of the dephasing length to the symmetry-breaking length via decoherence and carrier-density control. 3Preservation of pseudospin quantum interference up to room temperature (RT) is of fundamental importance for a variety of proposed applications, [12-16, 25, 26] but thermal perturbations typically suppress the phase coherence and hinder practical use of the devices. RT operation can be achieved if the high graphene mobility is consistently maintained over a broad temperature range and phonon-scattering contribution is significantly reduced. The mobility of graphene field-effect devices fabricated on SiO 2 /Si substrates is typically reduced at RT due to scattering with surface polar modes. [20,27,28] A significant improvement in quality was achieved by fabricating graphene devices on hexagonal-boron nitride (hBN) ...

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“…Graphene samples used in this work are synthesized using atmospheric pressure chemical vapor deposition (APCVD) growth method [44] on ultra-flat Cu wafers [45] and subsequently transferred onto prepatterned LaAlO 3 /SrTiO 3 substrates. Following transfer, deep-UV lithography and oxygen plasma cleaning processes selectively remove unwanted graphene.…”

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Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

et al. 2017

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“…Our devices utilize large domain size (∼ 100µm) graphene grown via Chemical Vapor Deposition (CVD) [9][10][11][12][13]. A macroscopic piece of graphene film, grown on Copper foil [9], is transferred to a 300 nm oxide SiO 2 /Si substrate using the standard PMMA/FeCl 3 transfer technique [11].…”

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Critical Current Scaling in Long Diffusive Graphene-Based Josephson Junctions

Borzenets

Draelos

et al. 2016

Nano Lett.

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We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼ 9µm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than 5µA, while the Thouless energy, E T h , covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IC RN is found to scale linearly with E T h , as expected from theory. However, the ratio IC RN /E T h is found to be 0.1-0.2: much smaller than the predicted ∼10 for long diffusive SNS junctions.

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“…The graphene film was grown on a 1-inch-diameter, diamond-turned copper substrate using atmospheric pressure chemical vapour deposition (APCVD) [7]. Following which a PMMA layer was spin-coated on the graphene.…”

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confidence: 99%

Graphene Q-switched mode-locked waveguide laser operating at 1535 nm

Choudhary

Dhingra

Kannan

et al. 2014

Advanced Solid State Lasers

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Chemical vapor deposition of graphene on large-domain ultra-flat copper

Cited by 55 publications

References 42 publications

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

Critical Current Scaling in Long Diffusive Graphene-Based Josephson Junctions

Graphene Q-switched mode-locked waveguide laser operating at 1535 nm

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Chemical vapor deposition of graphene on large-domain ultra-flat copper

Cited by 55 publications

References 42 publications

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO3/SrTiO3 Heterostructures

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO3/SrTiO3 Heterostructures

Critical Current Scaling in Long Diffusive Graphene-Based Josephson Junctions

Graphene Q-switched mode-locked waveguide laser operating at 1535 nm

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Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures