Chemical vapor deposition of boron-carbon films using organometallic reagents

Lewis, John S.; Vaidyaraman, Sundar; Lackey, W. J.; Agrawal, Pradeep; Freeman, G. B.; Barefield, E. Kent

doi:10.1016/0167-577x(96)00014-6

Cited by 26 publications

(39 citation statements)

References 3 publications

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“…The hydrogen content was found to be highly temperature dependent, most likely due to enhanced out diffusion of hydrogen at higher temperatures. Prior studies of B x C deposition at either significantly higher temperature of much lower pressure using organoboranes yielded mainly films rich in carbon with stoichiometries ranging from B 0.5 C to B 1.5 C. [12] Based upon these results, a deposition mechanism for boron-carbon films from TEB, where the TEB molecule is decomposed to BH 3 and hydrocarbons, is suggested. It is proposed that the decomposition of TEB in hydrogen can give rise to both C 2 H 4 and C 2 H 6 , while the decomposition in argon only yields to C 2 H 4 .…”

Section: Discussionmentioning

confidence: 99%

“…In the previous study on CVD of B x C films from TEB, [12] it was pointed out that TEB undergoes β-elimination where a hydrogen atom from an ethyl group bonds to the boron atom and the ethyl group leaves as ethylene:…”

Section: Discussionmentioning

confidence: 99%

“…[12] The films were deposited at 400-1100 °C, at low pressure (9-27 mbar) or atmospheric pressure, in hydrogen or argon ambient and were found to be carbon rich, with B/C ratios around 0.5, except for depositions in hydrogen at low pressure, temperature and precursor concentrations when B/C ratios around 1.5 was obtained. Recently the deposition of B x C films by Hot Filament CVD (HFCVD) from orthocarborane (o-C 2 B 10 H 12 ) in argon carrier gas has been reported.…”

Section: Introductionmentioning

confidence: 99%

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Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Pedersen

Höglund

Birch

et al. 2012

Chemical Vapor Deposition

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Abstract:Thin, amorphous boron-carbon films were deposited at low temperature (400-600 °C) by thermally activated CVD using the organoborane triethylboron (TEB) as a single precursor. Two different carrier gases were tested. At 600 °C using argon as carrier gas the deposition rate was close to 1 µm/h. The film had a density of 2.14 g/cm 3 with a B/C-ratio of 3.7. When hydrogen was used as carrier gas the film density was 2.42 g/cm 3 , the B/C ratio 4.6 and the deposition rate 0.35 µm/h. The hydrogen content in the films was about 3-4 at%, regardless of deposition ambient and varied only with the deposition temperature. In addition, both the film composition and the film density were found to vary significantly with the deposition temperature and the deposition ambient. Based upon these results, a deposition mechanism for the growth of boroncarbon films from TEB, where the TEB molecule is decomposed to BH 3 and hydrocarbons, is suggested.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Pedersen

Höglund

Birch

et al. 2012

Chemical Vapor Deposition

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“…The H 2 -BH 3 -C 2 H 4 -NH 3 system was studied since TEB is not available in this program and BH 3 and C 2 H 4 with a ratio of 1:3 were used instead as they were suggested to be the results of the dissociation of TEB [16]. Also the NH specie is not available in the program, thus for the decomposition of NH 3 only N, N 2 , NH 2 and N 2 H 2 are considered.…”

Section: Methodsmentioning

confidence: 99%

On the effect of water and oxygen in chemical vapor deposition of boron nitride

et al. 2012

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close to stoichiometric, although containing a few atomic percent oxygen and hydrogen, Xray diffraction measurements show no indications for nucleation of any crystalline BN phases, despite change in N/B-ratio and/or process temperature. Thermodynamic modeling suggests that this is due to formation of strong B-O bonds already in the gas phase in the presence of water or oxygen during growth. This growth behavior is believed to be caused by an uncontrolled release of water and/or oxygen in the deposition chamber and highlights the sensitivity of the BN CVD process towards oxygen and water.

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“…and carbon atoms in a single stream, but also their high reactivity allows for a CVD route at lower deposition temperature [35]. They also generate non-corrosive by-products.…”

Section: Boron-carbon Thin Filmsmentioning

confidence: 99%

CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions

Imam¹

2017

Linköping Studies in Science and Technology. Dissertations

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Chemical vapor deposition of boron-carbon films using organometallic reagents

Cited by 26 publications

References 3 publications

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

On the effect of water and oxygen in chemical vapor deposition of boron nitride

CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions

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