Chemical Vapor Deposition Growth of High Crystallinity Sb₂Se₃ Nanowire with Strong Anisotropy for Near‐Infrared Photodetectors

Abstract

Low‐dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb2Se3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb2Se3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle‐resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb2Se3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb2Se3 NW exhibit a wide spectral photoresponse range from visible to NIR (400–900 nm). Owing to the high crystallinity of Sb2Se3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W−1, and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb2Se3 NW, the device exhibits polarization‐dependent photoresponse. The high crystallinity and superior anisotropy of Sb2Se3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.

Sodium‐Mediated Epitaxial Growth of 2D Ultrathin Sb2Se3 Flakes for Broadband Photodetection

“…Nevertheless, to date the successful CVD growth of 2D Sb 2 Se 3 nanostructures has not been achieved yet. This is mainly attributed to the intrinsic 1D chain‐like crystal structure of Sb 2 Se 3 ,30,31 leading to the preferential formation of 1D nanostructures during the conventional CVD process 32. Meanwhile, it is worth noting that the Sb 2 Se 3 itself is easy to be oxidized or decomposed at high temperature, making the CVD growth even more challenging 32,33…”

Symmetry‐Reduction Enhanced Polarization‐Sensitive Photodetection in Core–Shell SbI3/Sb2O3 van der Waals Heterostructure

“…Recently, the newly discovered van der Waals nanowires with in‐plane anisotropy are meaningful for the optimization of polarized photodetectors. Group V–VI compounds (Sb, Bi/S, Se, Te) and Group V–VII compounds (As, Sb, Bi/Cl, Br, I) of the nanowires have been investigated in photovoltaic materials and they could be synthesized by chemical vapor transport (CVT) or chemical vapor deposition (CVD). Comparable photoresponse of WSe 2 /BiI 3 and graphene/BiI 3 van der Waals heterostructures have been demonstrated.…”

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

“…F, SEM and AFM images of grown Sb 2 Se 3 NWs. G, sixfold symmetry of the Sb 2 Se 3 NWs lattice structure Reproduced with permission . Copyright 2019, Wiley‐VCH…”

“…V‐VI semiconductor nanowire is another type of 1D material, which is widely used in the field of optoelectronics such as PDs . Photoelectric devices prepared based on Bi 2 S 3 NWs, Sb‐Bi‐Se NWs, Sb 2 Se 3 NWs, and so on, all exhibited excellent characteristics; for example, the high spectrum responsivity of Sb‐Bi‐Se NWs and the ultra‐fast response time of Bi 2 S 3 NWs .…”

“…Moreover, Sb 2 S 3 NWs exhibit not only a good light response over a wide spectral range, but also excellent properties over a wide temperature range . The anisotropy of Sb 2 Se 3 NWs exhibits its application in polarized light measurement . Figure E shows a schematic diagram of a CVD growth method for synthesizing Sb 2 Se 3 NWs.…”