Low‐dimensional semiconductors have attracted considerable attention due to their unique structures and remarkable properties, which makes them promising materials for a wide range of applications related to electronics and optoelectronics. Herein, the preparation of 1D Sb2Se3 nanowires (NWs) with high crystal quality via chemical vapor deposition growth is reported. The obtained Sb2Se3 NWs have triangular prism morphology with aspect ratio range from 2 to 200, and three primary lattice orientations can be achieved on the sixfold symmetry mica substrate. Angle‐resolved polarized Raman spectroscopy measurement reveals strong anisotropic properties of the Sb2Se3 NWs, which is also developed to identify its crystal orientation. Furthermore, photodetectors based on Sb2Se3 NW exhibit a wide spectral photoresponse range from visible to NIR (400–900 nm). Owing to the high crystallinity of Sb2Se3 NW, the photodetector acquires a photocurrent on/off ratio of about 405, a responsivity of 5100 mA W−1, and fast rise and fall times of about 32 and 5 ms, respectively. Additionally, owing to the anisotropic structure of Sb2Se3 NW, the device exhibits polarization‐dependent photoresponse. The high crystallinity and superior anisotropy of Sb2Se3 NW, combined with controllable preparation endows it with great potential for constructing multifunctional optoelectronic devices.
2D transition-metal dichalcogenides (TMDs) are an emerging class of materials with superior properties that make them highly attractive for fundamental studies of novel physics and for applications ranging from nanoelectronics and nanophotonics to sensing and catalysis. [1][2][3][4][5] As the most extensively Research on transition metal dichalcogenides (TMDs) has been accelerated by the development of large-scale synthesis based on chemical vapor deposition (CVD) growth. However, in most cases, CVD-grown TMDs are composed of randomly oriented grains, and thus contain many distorted grain boundaries (GBs), which seriously degrade their electrical and photoelectrical properties. Here, the epitaxial growth of highly aligned MoS 2 grains is reported on a twofold symmetry a-plane sapphire substrate. The obtained MoS 2 grains have an unusual rectangle shape with perfect orientation alignment along the [1-100] crystallographic direction of a-plane sapphire. It is found that the growth temperature plays a key role in its orientation alignment and morphology evolution, and high temperature is beneficial to the initial MoS 2 seeds rotate to the favorable orientation configurations. In addition, the photoluminescence quenching of the well-aligned MoS 2 grains indicates a strong MoS 2 −substrate interaction which induces the anisotropic growth of MoS 2 , and thus brings the formation of rectangle shape grains. Moreover, the well-aligned MoS 2 grains splice together without GB formation, and thus that has negligible effect on its electrical transport properties. The progress achieved in this work could promote the controlled synthesis of large-area TMDs single crystal film and the scalable fabrication of high-performance electronic devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.