Chemical-state-resolved depth profiles of Al/Pr0.7Ca0.3MnO3 stacked structures for application in resistive switching devices

Abstract

We have investigated the interfacial chemical reaction between Al metal electrodes and Pr0.7Ca0.3MnO3 perovskite oxides to shed light on the underlying mechanism of resistive switching phenomenon that can be utilized in random access memory devices. Depth profiles of the Al/Pr0.7Ca0.3MnO3 interface show the formation of Al2O3 layers resulting from redox reactions between Al metal and perovskite oxide. Angle-resolved Mn 2p core-level photoemission spectra, which are independent of the Al metal electrode thickness, show that a Mn-Al alloy is formed at the interface between Al metal and Al2O3 layers during the initial growth of the Al metal electrode. This suggests that the Mn impurity level in the band gap of Al2O3 layers plays an important role in resistive switching characteristics.

Electron Doping Effect in the Resistive Switching Properties of Al/Gd1–xCaxMnO3/Au Memristor Devices

“…The switching in the devices is bipolar, where the high and low resistive states can be achieved by the application of opposite voltage polarities, similar to what has been reported for other manganite compounds. 1 , 17 , 22 , 24 , 33 − 36 The voltage amplitudes for RS are asymmetrical, and the transition to the negative polarity-induced HRS happens at a lower amplitude than the positive polarity-induced LRS transition. The pristine state of the devices is close to the LRS.…”