No abstract

We report on the resistive switching (RS) properties of Al/Gd 1– x Ca x MnO 3 (GCMO)/Au thin-film memristors. The devices were studied over the whole calcium substitution range x as a function of electrical field and temperature. The RS properties were found to be highly dependent on the Ca substitution. The optimal concentration was determined to be near x = 0.9, which is higher than the values reported for other similar manganite-based devices. We utilize an equivalent circuit model which accounts for the obtained results and allows us to determine that the electrical conduction properties of the devices are dominated by the Poole–Frenkel conduction mechanism for all compositions. The model also shows that lower trap energy values are associated with better RS properties. Our results indicate that the main RS properties of Al/GCMO/Au devices are comparable to those of other similar manganite-based materials, but there are marked differences in the switching behavior, which encourage further exploration of mixed-valence perovskite manganites for RS applications.

The effect of in situ oxygen and vacuum annealings on the low bandwidth manganite Gd1−x Ca x MnO3 (GCMO) thin film with x = 0.4 was investigated. Based on the magnetic measurements, the AFM–FM coupling is suppressed by the vacuum annealing treatment via destroying the double exchange interaction and increasing the unit cell volume by converting the Mn4+ to the Mn3+. Consequently, resistance increases significantly compared to pristine film. The results are explained by a model obtained from the positron annihilation studies, where the vacuum annealing increased the annihilation lifetime in A and B sites due to the formation of vacancy complexes V A,B–V O, which was not the case in the pristine sample. The positron annihilation analysis indicated that most of the open volume defects have been detected in the interface region rather than on the subsurface layer and this result is confirmed by detailed x-ray reflection analysis. On the other hand, the effect of oxygen annealing on the unit cell volume and magnetization was insignificant. This is in agreement with positron annihilation results which demonstrated that the introduction of oxygen does not change the number of cation vacancies significantly. This work demonstrates that the modification of oxygen vacancies and vacancy complexes can tune magnetic and electronic structure of the epitaxial thin films to provide new functionalities in future applications.

No abstract

No abstract