FTO/quartz prepared by spray pyrolysis maintained both low resistivity and high transmittance at temperatures up to 700 °C, enabling superior photoelectrochemical activity of CuBi2O4 semiconductor photoelectrodes.
FTO/quartz prepared by spray pyrolysis maintained both low resistivity and high transmittance at temperatures up to 700 °C, enabling superior photoelectrochemical activity of CuBi2O4 semiconductor photoelectrodes.
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