Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning

Kim, Nam–Hoon; Ko, Pil Ju; Choi, Gwon-Woo; Seo, Yong-Jin; Lee, Woo-Sun

doi:10.1016/j.tsf.2005.09.089

Cited by 20 publications

(11 citation statements)

References 19 publications

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“…But if its chemical reaction is followed (1) in the course of CMP, it will consume a large amount of alkali, which makes pH reduce quickly. For example, in the condition of pH = 10, pH should reduce rapidly during CMP and the removal rate should be reduced rapidly.…”

Section: Resultsmentioning

confidence: 99%

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Study on the Effect of Nano‐SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Liu

Wang

Sun

et al. 2006

Journal of Nanomaterials

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Both process and mechanical of silicon substrate chemical mechanical polishing (CMP) are studied in detail, and the effects of experiments designed indicate that nano-SiO2grinding particles seem to be acted as catalyzer besides the grinding action during the CMP process. This is different from the traditional function. As a result, in the condition of low pH, the nano-SiO2slurry can be recycled. In the meanwhile, the removal rate can gain stability and pH value does not change obviously.

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Section: Resultsmentioning

confidence: 99%

“…It is generally known that several process parameters including equipment and consumables (pad, backing film and slurry, etc.) can optimize and improve the CMP performance [1].…”

Section: Introductionmentioning

confidence: 99%

Study on the Effect of Nano‐SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Liu

Wang

Sun

et al. 2006

Journal of Nanomaterials

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“…By implementing such protocol, the pad thickness profile can be better maintained and the WIWNU can be improved [31,32]. Pad conditioning temperature is also an important aspect that could influence the pad surface properties and the CMP performance [33][34][35][36][37][38]. The removal rate of oxide film after high temperature conditioning is much higher than that at low temperature conditioning.…”

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

“…The removal rate of oxide film after high temperature conditioning is much higher than that at low temperature conditioning. Higher temperature conditioning also makes it easier to remove the slurry residues from pores and grooves of polishing pads [33][34][35]. Diamond grid shape, size, and numbers, and their positions (alignment) on the conditioner head are also factors that influence the conditioning effects/efficiency.…”

Section: Pad Conditioning and Its Effect On Cmp Performancementioning

confidence: 99%

Pads for IC CMP

Wang

Paul

Kobayashi

et al. 2007

Microelectronic Applications of Chemical Mechanical Planarization

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The chemical-mechanical polishing or planarization (CMP) process is a complex interplay between the wafer and the consumables involved. The consumables include slurry, pad, conditioner, and so on. During polishing, the pad carries the slurry and delivers it to the wafer surface. It also transmits the normal and shear forces from the polisher to the wafer. Therefore, polishing pad plays a critical role in the CMP process and influences the outcomes such as material removal rate (MRR), within-wafer nonuniformity (WIWNU), wafer-to-wafer nonuniformity (WTWNU), step height reduction efficiency (SHRE), and defect counts.As the CMP process is a combination of mechanical and chemical processes, the polishing pad has to endure repeated mechanical stress and constant chemical attacks. The applied downforce and polishing-induced friction force cause various levels of compression and abrasion. Slurry components such as oxidizers and acids can react with different components of the pads. Thus the polishing pad must have sufficient mechanical integrity and chemical resistance to survive the rigors of polishing. Polishing pads must balance the needs of hardness, modulus for planarity, and strength to resist wear and tear during polishing. Pads must also be able to survive the aggressive slurry chemistry used in CMP polishing without degrading, delaminating, blistering, or warping, since CMP slurries for the polishing of interlevel dielectric (ILD) oxide layers are usually highly alkaline with pH as high as 11, and CMP slurries for the polishing of metal films are highly acidic Microelectronic Applications of Chemical Mechanical Planarization, Edited by Yuzhuo Li

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“…Zhang et al (2008) discussed material removal mechanisms in the finishing of ceramics and glasses. To improve planarization in the CMP process, the nature of the contact between the abrasive and the oxide layer must be understood in detail, and the effect of the abrasive slurry examined (Kim et al, 2006a(Kim et al, , 2006bLei et al, 2007). Some process parameters, including abrasive contents, oxidizer content, slurry flow rate and polishing time, were varied to optimize the CMP process.…”

Section: Introductionmentioning

confidence: 99%

Optimization of chemical mechanical polishing parameters on surface roughness of steel substrate with aluminum nanoparticles via Taguchi approach

Peng¹

2014

Industrial Lubrication and Tribology

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Purpose – The purpose of this paper is to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Chemical mechanical polishing (CMP) is now widely used in the aerospace industry for global planarization of large, high value-added components. Design/methodology/approach – Optimal parameters are applied in experimental trials performed to investigate the effects of abrasive contents, oxidizer contents, slurry flow rate and polishing time in achieving a mirror-like finish on polished surfaces. Taguchi design experiments are performed to optimize the parameters of CMP performed in steel specimens. Findings – Their optimization parameters were found out; the surface scratch, polishing fog and remaining particles were reduced; and the flatness of the steel substrate was guaranteed. The average roughness (Ra) of the surface was reduced to 6.7 nm under the following process parameters: abrasive content of 2 weight per cent, oxidizer content of 2 weight per cent, slurry flow rate of 100 ml/min and polishing time of 20 min. Originality/value – To meet the final process requirements, the CMP process must provide a good planarity, precise selectivity and a defect-free surface. Surface planarization of components used to fabricate aerospace devices is achieved by CMP process, which enables global planarization by combining chemical and mechanical interactions.

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Chemical mechanical polishing (CMP) mechanisms of thermal SiO2 film after high-temperature pad conditioning

Cited by 20 publications

References 19 publications

Study on the Effect of Nano‐SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Study on the Effect of Nano‐SiO2 in ULSI Silicon Substrate Chemical Mechanical Polishing Process

Pads for IC CMP

Optimization of chemical mechanical polishing parameters on surface roughness of steel substrate with aluminum nanoparticles via Taguchi approach

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