Chemical kinetics of telluride pyrolysis

IR laser co-pyrolysis of (CH3)2Te and (CH3)4Sn: Gas-phase formation and deposition of nanostructured SnTe

“…The observed similar depletion rate of both compounds is in keeping with very similar dissociation energy of the C-Te (ca. 250 kJ mol À1 [15,16]) and C-Sn (ca. 270 kJ mol À1 [17]) bonds.…”

Chemical vapour deposition of selenium and tellurium films by UV laser photolysis of selenophene and tellurophene

“…The energy delivered by the photons of the ArF and KrF lasers corresponds respectively to ca 620 and 480 kJ einstein À1 . These energies are sufficient to cleave the two M-C (M = Se, Te) bonds, as the dissociation energies of the Se-C 13 and Te-C 14,15 bonds were estimated to be ca 250 kJ mol À1 . It appears that these energies are also enough to achieve cleavage of the two stronger M-C bonds in partially aromatic 16,17 tellurophene and selenophene.…”

Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors

“…For instance, a decrease of ZnTe growth rate was observed when the DMZn was supplied in excess. 14,18 The stronger hot-wall temperature dependence of ZnTe growth relative to that of CdTe may suggest an increase of homogeneous decomposition with the hot-wall temperature. 16 But if this is the mechanism, it is not clear why such a decrease of growth rate was not observed when the DMCd was supplied excessively in CdTe growth, since the DMCd also has methyl radicals.…”