2000
DOI: 10.1002/1099-0739(200011)14:11<715::aid-aoc63>3.0.co;2-0
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Chemical vapour deposition of selenium and tellurium films by UV laser photolysis of selenophene and tellurophene

Abstract: Excimer laser-induced photolysis of gaseous selenophene and tellurophene affords gaseous 1-buten-3-yne and ethyne (as major products) and butadiyne (a very minor product) and results in chemical vapour deposition of selenium and tellurium films. The film properties were characterized by XPS and SEM techniques and by UV spectroscopy.

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Cited by 20 publications
(6 citation statements)
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“…We have previously reported on UV laser-induced gasphase photolysis of several organoselenium compounds for chemical vapor deposition of selenium films. [29][30][31][32][33] Dialkyl selenides 29,30,32 and selenophene 31,33 irradiated by ArF or KrF lasers were efficiently photolyzed into selenium, which produced thin Se layers upon deposition to Al and glass. Here we report that the UV laser photolysis of gaseous diethyl selenium and consecutive Se deposition onto several metals results in some cases (Ag, Cu, Cd, Mg, Zn) in the formation of metal selenide.…”
Section: Introductionmentioning
confidence: 99%
“…We have previously reported on UV laser-induced gasphase photolysis of several organoselenium compounds for chemical vapor deposition of selenium films. [29][30][31][32][33] Dialkyl selenides 29,30,32 and selenophene 31,33 irradiated by ArF or KrF lasers were efficiently photolyzed into selenium, which produced thin Se layers upon deposition to Al and glass. Here we report that the UV laser photolysis of gaseous diethyl selenium and consecutive Se deposition onto several metals results in some cases (Ag, Cu, Cd, Mg, Zn) in the formation of metal selenide.…”
Section: Introductionmentioning
confidence: 99%
“…1,3-Dimethyldisiloxane was prepared by cleavage of methyl-(phenyl)silane with HBr and subsequent hydrolysis of the produced bromo(methyl)silane. 22 Its purity was better than 97% as checked by gas chromatography.…”
Section: Methodsmentioning
confidence: 99%
“…1,3-Dimethyldisiloxane (0.7 kPa) was irradiated in a cylindrical Pyrex reactor equipped with NaCl windows, a valve for the connection to a standard vacuum manifold and a sleeve with a rubber septum for the withdrawal by syringe of gaseous samples for analysis. A TEA CO 2 laser (Plovdiv University) operated with a frequency of 1 Hz on the P(42) line of the 00 0 1A10 0 0 transition (922.92 cm 21 ) with a ¯uence of 0.52 J cm 22 incident upon an area of 0.25 cm 2 . Deposits were produced on copper and NaCl substrates housed in the reactor before irradiation.…”
Section: Methodsmentioning
confidence: 99%
“…Two peaks at 576.2 and 586.5 eV belong to Te=O (Supporting Information, Figure S2D), implying Te on the surface of NPs IV were all oxidized to Te=O . To verify the existence of unoxidized Te inside of NPs, the NPs surface was etched for 20 nm depth for XPS . Figure E showed that two peaks at 573.2 and 583.6 eV were observed, which were assigned to unoxidized Te, suggesting that tellurophene exists in the NPs .…”
Section: Figurementioning
confidence: 99%