Chemical interactions in GaAs‐LEC crystal growth

Lambert, U.; Wiese, U.

doi:10.1002/adma.19910030904

Cited by 13 publications

(2 citation statements)

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“…We fabricate two lateral photoconductive photodetectors on a 0.6-mm-thickness undoped SI (100) GaAs:EL2 wafer growing by the method of liquid encapsulated Czochralski (LEC) 4 . The carrier lifetime is about 1ns, the dark resistivity is greater than or equal to 50 MΩ·cm and the electron mobility is more than 5500 cm 2 /(V·s).…”

Section: Experiments and Discussmentioning

confidence: 99%

“…Due to its larger energy gap (1.42 eV) , the intrinsic resistivity of GaAs (~3.8×10 8 Ω/cm)is much higher than Si (~2.2×10 5 Ω/cm)and GaAs devices generate less noise than silicon devices when operated at high frequencies. 4 They can also be operated at higher power levels than the equivalent silicon device because they have higher breakdown voltages. These properties recommend GaAs circuitry in mobile phones, satellite communications, microwave point-to-point links, and some radar systems.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of semi-insulating gallium arsenide photoconductive photodetectors

et al. 2008

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The structure and working mechanism of a photoconductive photodetector are compared with a p + -i-n + (PIN) photodiode and a metal-semiconductor-metal (MSM) photodetector which is regarded as two back-to-back Schottky barrier photodiodes. Because a photoconductive photodetector has the features of high critical field strength, especially no junction capacitance and no dead zone, it has the main merits of high signal-noise ratio, ultrafast response and high quantum efficiency. We fabricate two photoconductive photodetectors in a lateral configuration on a semi-insulating (SI) gallium arsenide (GaAs) wafer, which wavelength range of response is from UV to 1.73μm due to two-photon absorption. It is shown by the volt-ampere characteristics curve that the dark leakage current of 30-μm-gap SI GaAs photoconductive photodetector at a bias field of 66 V/cm is less than 1.2 μA. Our experiment has demonstrated that SI GaAs photoconductive photodetectors are noteworthily superior to high-speed Si PIN photodetectors to measure ultrashort pulse lasers with the properties of ultrafast response, ultrawide spectral range, high signal-noise ratio and ease of fabrication.

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Section: Experiments and Discussmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%