A high spatial resolution, near infrared absorption method has been used to determine [EL2] concentrations in semi-insulating undoped Czochralski liquid encapsulated (LEC) GaAs. Fine structure superimposed on the well-known ‘‘W’’ distribution across 〈110〉 diameters of {001} wafers has been detected. Fine structure has also been directly observed in {110} sections of ingots grown along 〈001〉 using a CCTV vidicon system to observe transmitted infrared radiation. The structure consists of narrow bands of increased absorption which correspond with high densities of dislocations in the same specimens.
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