III-V compounds

Grant, I.

doi:10.1007/978-94-011-2170-5_5

Cited by 11 publications

(4 citation statements)

References 29 publications

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“…Indium−phosphorus compounds have become important for numerous disciplines , including materials chemistry. − For example, semiconductors such as InP have attracted much attention because of their importance in applications such as light-emitting diodes . The adducts formed by indium trihalide or indium trialkyl moieties with phosphine ligands, which are classical Lewis acid−base complexes, are single-source precursors for the preparation of a wide range of InP-based semiconductors .…”

Section: Introductionmentioning

confidence: 99%

Solid-State¹¹⁵In and³¹P NMR Studies of Triarylphosphine Indium Trihalide Adducts

Bernard

et al. 2010

J. Am. Chem. Soc.

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Solid-state (115)In and (31)P NMR spectroscopy, relativistic density functional theory (DFT) calculations, and single-crystal X-ray diffraction were used to investigate a series of triarylphosphine indium(III) trihalide adducts, X(3)In(PR(3)) and X(3)In(PR(3))(2) (X = Cl, Br or I; PR(3) = triarylphosphine ligand). The electric field gradient tensors at indium as well as the indium and phosphorus magnetic shielding tensors and the direct and indirect (115)In-(31)P spin-spin coupling were characterized; for complexes possessing a C(3) symmetry axis, the anisotropy in the indirect spin-spin coupling, DeltaJ((115)In,(31)P), was also determined. The (115)In quadrupolar coupling constants, C(Q)((115)In), range from +/-1.25 +/- 0.10 to -166.0 +/- 2.0 MHz. For any given phosphine ligand, the indium nuclei are most shielded for X = I and least shielded for X = Cl, a trend also observed for other group-13 nuclei in M(III) complexes. This experimental trend, attributed to spin-orbit effects of the halogen ligands, is reproduced by the DFT calculations. The spans of the indium magnetic shielding tensors for these complexes, delta(11)-delta(33), range from 40 +/- 7 to 710 +/- 60 ppm; those determined for phosphorus range from 28 +/- 1.5 to 50 +/- 3 ppm. Values of (1)J((115)In,(31)P) range from 550 +/- 20 to 2500 +/- 20 Hz. For any given halide, the (1)J((115)In,(31)P) values generally increase with increasing basicity of the PR(3) ligand. Calculated values of (1)J((115)In,(31)P) and DeltaJ((115)In,(31)P) duplicate experimental trends and indicate that both the Fermi-contact and spin-dipolar Fermi-contact mechanisms make important contributions to the (1)J((115)In,(31)P) tensors.

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Section: Introductionmentioning

confidence: 99%

Solid-State¹¹⁵In and³¹P NMR Studies of Triarylphosphine Indium Trihalide Adducts

Bernard

et al. 2010

J. Am. Chem. Soc.

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“…Applications of indium lie mainly in the electronics industries in III−V semiconductors such as InP and InSb, although there is growing use of indium reagents in organic synthesis, and the radio-nuclides 111 In and 113m In as medical imaging agents …”

Section: Introductionmentioning

confidence: 99%

Preparation, Characterization, and Structural Systematics of Diphosphane and Diarsane Complexes of Indium(III) Halides

et al. 2008

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2 ) 2 ) were identified crystallographically and contain polymeric cations with six-coordinate indium centers bonded to one chelating L-L and a terminal chlorine, linked by alternating single and double chlorine bridges into chains. The complicated chemistry of InX 3 with these two rigid chelates is contrasted with that of the flexible diphosphane Et 2 P(CH 2 ) 2 PEt 2 , which forms [In 2 Cl 6 {Et 2 P(CH 2 ) 2 PEt 2 } 2 ], and with more sterically demanding o-C 6 H 4 (PPh 2 ) 2 (Sigl et al. Eur. J. Inorg. Chem. 1998, 203-210). The results also contrasted with those found for GaX 3 with the same ligands (Cheng et al. Inorg. Chem. 2007, 46, 7215-7223).

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“…However, the p-block metals have many technologically important applications and devising improved reagents for existing processes or developing new synthons depends upon an understanding of how the ligands control the metal-center chemistry, structure, and reactivity. In the case of gallium, the major applications lie in the electronics industries in compound semiconductors based on III−V materials: for example, GaN, GaP, and GaAs are used extensively in LED applications; GaSb is used in thermal imaging devices, while GaAs is also widely used in integrated circuits, displays, and solar cells. , Other applications of gallium compounds are as gallium gadolinium garnet in bubble memory devices, and the lower Lewis acidity, compared to that of aluminum halides, has produced some applications for GaX 3 in organic transformations . The radioisotopes 67 Ga and 68 Ga have found uses in diagnosis and therapy; mostly, these are used as gallium complexes with O- or N-donor chelates, which resist hydrolysis in vivo and provide appropriate lipophilicity.…”

Section: Introductionmentioning

confidence: 99%

Preparation, Characterization, and Structural Systematics of Diphosphane and Diarsane Complexes of Gallium(III) Halides

et al. 2007

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The diphosphane o-C6H4(PMe2)2 reacts with GaX3 (X = Cl, Br, or I) in a 1:1 molar ratio in dry toluene to give trans-[GaX2{o-C6H4(PMe2)2}2][GaX4], the cations of which contain the first examples of six-coordinate gallium in a phosphane complex. The use of a 1:2 ligand/GaCl3 ratio produced [GaCl2{o-C6H4(PMe2)2}][GaCl4], containing a pseudotetrahedral cation, and similar pseudotetrahedral [GaX2{o-C6H4(PPh2)2}][GaX4] complexes are the only products isolated with the bulkier o-C6H4(PPh2)2. On the other hand, Et2P(CH2)2PEt2, which has a flexible aliphatic backbone, formed [(X3Ga)2{mu-Et2P(CH2)2PEt2}], in which the ligand bridges two pseudotetrahedral gallium centers. The diarsane, o-C6H4(AsMe2)2, formed [GaX2{o-C6H4(AsMe2)2}][GaX4], also containing pseudotetrahedral cations, and in marked contrast to the diphosphane analogue, no six-coordinate complexes form; a very rare example where these two much studied ligands behave differently towards a common metal acceptor. The complexes [(I3Ga)2{mu-Ph2As(CH2)2AsPh2}] and [GaX3(AsMe3)] are also described. The X-ray structures of trans-[GaX2{o-C6H4(PMe2)2}2][GaX4] (X = Cl, Br or I), [GaCl2{o-C6H4(PPh2)2}][GaCl4], [GaX2{o-C6H4(AsMe2)2}][GaX4] (X = Cl or I), [(I3Ga)2{mu-Ph2As(CH2)2AsPh2}], and [GaX3(AsMe3)] (X = Cl, Br or I) are reported, and the structural trends are discussed. The solution behavior of the complexes has been explored using a combination of 31P{1H} and 71Ga NMR spectroscopy.

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III-V compounds

Cited by 11 publications

References 29 publications

Solid-State¹¹⁵In and³¹P NMR Studies of Triarylphosphine Indium Trihalide Adducts

Solid-State¹¹⁵In and³¹P NMR Studies of Triarylphosphine Indium Trihalide Adducts

Preparation, Characterization, and Structural Systematics of Diphosphane and Diarsane Complexes of Indium(III) Halides

Preparation, Characterization, and Structural Systematics of Diphosphane and Diarsane Complexes of Gallium(III) Halides

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III-V compounds

Cited by 11 publications

References 29 publications

Solid-State115In and31P NMR Studies of Triarylphosphine Indium Trihalide Adducts

Solid-State115In and31P NMR Studies of Triarylphosphine Indium Trihalide Adducts

Preparation, Characterization, and Structural Systematics of Diphosphane and Diarsane Complexes of Indium(III) Halides

Preparation, Characterization, and Structural Systematics of Diphosphane and Diarsane Complexes of Gallium(III) Halides

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Solid-State¹¹⁵In and³¹P NMR Studies of Triarylphosphine Indium Trihalide Adducts

Solid-State¹¹⁵In and³¹P NMR Studies of Triarylphosphine Indium Trihalide Adducts