2021
DOI: 10.1364/oe.431306
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Chemical etching of fused silica after modification with two-pulse bursts of femtosecond laser

Abstract: Bursts of femtosecond laser pulses were used to record internal modifications inside fused silica for selective chemical etching. Two-pulse bursts with a variable energy ratio between those pulses at a fixed inter-pulse duration of 14.5 ns were applied for the first time. The selective chemical etching rate of the laser-modified material with the burst of two pulses was compared to the single-pulse regime when etching in HF and KOH etchants. The advantage of the burst-mode processing was demonstrated when etch… Show more

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Cited by 14 publications
(8 citation statements)
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“…Therefore, the accuracy and sharpness of the structural etching rate of the modified material can be increased. This can be achieved in a few ways, such as by optimizing the etching process, the etching solution [ 36 ], and the laser parameters [ 39 ], or by introducing a specific femtosecond burst regime [ 40 ]. Such improvements can create the possibility of tuning the filter size more accurately.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the accuracy and sharpness of the structural etching rate of the modified material can be increased. This can be achieved in a few ways, such as by optimizing the etching process, the etching solution [ 36 ], and the laser parameters [ 39 ], or by introducing a specific femtosecond burst regime [ 40 ]. Such improvements can create the possibility of tuning the filter size more accurately.…”
Section: Resultsmentioning
confidence: 99%
“…In this section, the influence of burst pulse number on the taper of the via is investigated. Bursts pulses can increase the throughput and the etching rate [29]. The number of sub-pulses in different burst envelopes in this experiment is shown in figure 4.…”
Section: Effect Of Burst Pulse Numbermentioning
confidence: 92%
“…Selectivity values above 1000 could be obtained for fused silica by laser parameter optimization [ 22 ]. Meanwhile, selectivity values above 2000 can be achieved by introducing a particular burst regime [ 26 ] or adding organic solvents to the etchant [ 27 ]. SLE is a perfect technology for high aspect ratio structure fabrication.…”
Section: Introductionmentioning
confidence: 99%