Chemical deposition of TIN(II) sulphide thin films

Atomic Layer Deposition of Tin Monosulfide Thin Films

“…For vapor-based deposition techniques such as chemical spray pyrolysis and thermal evaporation, this effect is attributed to the high vapor pressure of sulfur, which evaporates out from the deposited film. [21,31] Nonstoichiometric SnS caused by either Sn +2 vacancies [32,33] or excess tin atoms [6,20] contains deep acceptor states with an activation energy (E a ) in the range between 0.22 and 0.45 eV [6,20,[32][33][34][35][36] depending on the deposition technique. The deep acceptor states, which could act as carrier recombination catalysts, are expected to lower the solar energy conversion efficiency.…”

Effects of Concentration of Triethanolamine and Annealing Temperature on Band Gap of Thin Film of Tin Sulphide Prepared by Chemical Bath Deposition Method

“…Tin sulphide is a cost-effective and environmentally friendly material among the group of compound semiconductors that are currently being explored for low-cost photovoltaic materials. It possesses a high optical absorption coefficient which is greater than 10 4 cm -1 [Ristov et al, 1989]. The physical and optical properties of SnS such as its color and optical band gap depend on the method employed to prepare it.…”

“…3, No. 1 does not require vacuum conditions and hence is appropriate for basic research [Ristov et al, 1989]. In this work, we have prepared thin films of SnS using this method and investigated the influence of concentration of TEA in the precursor solution and the annealing temperature towards the optical energy band gap measurement of the films on glass substrate.…”

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

“…Semiconductor thin films have fascinating application in the field of photovoltaic energy conversion [1][2][3]. Tin sulfide is IV-VI class of compound forming a multiplicity of phases such as SnS, SnS 2 , Sn 2 S 3 , Sn 3 S 4 , etc.…”

“…In the present study, it is desired to prepare and characterize tin disulfide thin films on amorphous glass substrates at different Tin (M Sn ) precursor concentrations using the precursor solutions of Tin tetra chloride penta hydrate and thiourea by nebulized spray pyrolysis technique. As the substrate temperature was optimized earlier, these films of SnS 2 were prepared at that substrate temperature by changing the concentration of both cation and anion precursor solutions, keeping the ratio of precursors of cation and anion species as 1:2 always.…”