Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces

Ohno, Yutaka; Liang, Jianbo; Shigekawa, Naoteru; Yoshida, Hideto; Takeda, Seiji; Miyagawa, Reina; Shimizu, Yasuo; Nagai, Yasuyoshi

doi:10.1016/j.apsusc.2020.146610

Cited by 25 publications

(23 citation statements)

References 35 publications

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“…The fact that no lattice fringes were observed at the asbonded GaN/diamond heterointerface indicates that the intermediate layer was an amorphous layer, the same as the Si/Si, [36,37] Si/SiC, [38] and Si/diamond [21] interfaces fabricated by SAB. However, this result is different from the Si/GaAs and GaAs/GaAs interfaces fabricated by SAB, [39,40] in which no amorphous layer was observed in the GaAs substrate adjacent to the bonding interface because the GaAs surface was not severely damaged by the Ar beam irradiation during the bonding process. The observed intensity gradients for C, Ga, and N atoms indicate that the amorphous layer was an atomic intermixing layer mainly composed of C, Ga, and N atoms.…”

Section: Resultscontrasting

confidence: 68%

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

et al. 2021

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The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐power devices. However, it is a big challenge to grow GaN on diamond due to the large lattice and thermal‐expansion coefficient mismatch between GaN and diamond. In this work, the fabrication of a GaN/diamond heterointerface is successfully achieved by a surface activated bonding (SAB) method at room temperature. A small compressive stress exists in the GaN/diamond heterointerface, which is significantly smaller than that of the GaN‐on‐diamond structure with a transition layer formed by crystal growth. A 5.3 nm‐thick intermediate layer composed of amorphous carbon and diamond is formed at the as‐bonded heterointerface. Ga and N atoms are distributed in the intermediate layer by diffusion during the bonding process. Both the thickness and the sp2‐bonded carbon ratio of the intermediate layer decrease as the annealing temperature increases, which indicates that the amorphous carbon is directly converted into diamond after annealing. The diamond of the intermediate layer acts as a seed crystal. After annealing at 1000 °C, the thickness of the intermediate layer is decreased to approximately 1.5 nm, where lattice fringes of the diamond (220) plane are observed.

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Section: Resultscontrasting

confidence: 68%

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

et al. 2021

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“…3). This result shows that the compositional modification at the GBs due to FIB irradiation can be suppressed by using LT-FIB technique, as reported [49,64,65]. Therefore, the concentration profile obtained by LT-FIB would significantly reflect the distribution of segregation sites, even though the impact of local magnification effects, about 0.5 nm in the segregation thickness [65], still remains.…”

Section: Segregation Sites At σ9{114} Gbs and σ9{111}/{115} Gbssupporting

confidence: 66%

Segregation mechanism of arsenic dopants at grain boundaries in silicon

Ohno

Yokoi

Shimizu

et al. 2021

Science and Technology of Advanced Materials: Methods

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“…Therefore, the development of heterogeneous material systems compatible with the Si-CMOS platform can be the next generation of semiconductor technologies to break through the bottleneck of Si-CMOS scaling. Among numerous semiconductors, III-V compound materials, such as InP, GaAs, and GaN, receive widespread attention due to the excellent electrical properties and high-electron-mobility in transistors [ 79 , 80 , 81 , 82 ]. Compared with Si, most III-V compounds have a direct bandgap, making them can be used as light-emitting diodes (LEDs) and lasers [ 83 , 84 , 85 , 86 , 87 ].…”

Section: Heterogeneous Bonding For Iii-v and Wide Bandgap Semiconductor Thin-film Transfer Onto Si Substratementioning

confidence: 99%

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

Ren

et al. 2021

Micromachines

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Wafer bonding technology is one of the most effective methods for high-quality thin-film transfer onto different substrates combined with ion implantation processes, laser irradiation, and the removal of the sacrificial layers. In this review, we systematically summarize and introduce applications of the thin films obtained by wafer bonding technology in the fields of electronics, optical devices, on-chip integrated mid-infrared sensors, and wearable sensors. The fabrication of silicon-on-insulator (SOI) wafers based on the Smart CutTM process, heterogeneous integrations of wide-bandgap semiconductors, infrared materials, and electro-optical crystals via wafer bonding technology for thin-film transfer are orderly presented. Furthermore, device design and fabrication progress based on the platforms mentioned above is highlighted in this work. They demonstrate that the transferred films can satisfy high-performance power electronics, molecular sensors, and high-speed modulators for the next generation applications beyond 5G. Moreover, flexible composite structures prepared by the wafer bonding and de-bonding methods towards wearable electronics are reported. Finally, the outlooks and conclusions about the further development of heterogeneous structures that need to be achieved by the wafer bonding technology are discussed.

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Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces

Cited by 25 publications

References 35 publications

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Fabrication of GaN/Diamond Heterointerface and Interfacial Chemical Bonding State for Highly Efficient Device Design

Segregation mechanism of arsenic dopants at grain boundaries in silicon

Heterogeneous Wafer Bonding Technology and Thin-Film Transfer Technology-Enabling Platform for the Next Generation Applications beyond 5G

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