Chemical bath deposition of tin selenide thin films

Zainal, Zulkarnain; Saravanan, N.; Kassim, Anuar; Hussein, Mohd Zobir; Yunus, Wan Mahmood Mat

doi:10.1016/j.mseb.2003.11.008

Cited by 73 publications

(37 citation statements)

References 25 publications

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“…Various deposition techniques are reported for the preparation of SnSe thin films viz. chemical bath deposition [5], atomic layer deposition [6], thermal evaporation [7][8], Hot wall epitaxy [9], flash evaporation [10]. Among them, the thermal evaporation is most commonly employed method because it is very simple, economical, and convenient technique, mostly used in the production of large-area devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Kumar¹,

Parihar²,

Kumar³

et al. 2012

MATERIALS

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Tin Selenide (SnSe) thin films were prepared from the pulverized compound material by thermal evaporation method, to study the effect of film thickness on its structural, and optical properties. The different thicknesses of SnSe thin films, from 150 nm to 500 nm, were grown on glass substrate held at room temperature. X-ray diffraction, atomic force microscopy, transmission measurement, and four-point probe method were used to characterize the thin films. The optical transmission spectra suggests, the energy band gap decreases with increasing the film thickness. The electrical resistivity shows that the films were semi-conducting in behavior having p-type conductivity.

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Section: Introductionmentioning

confidence: 99%

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Kumar¹,

Parihar²,

Kumar³

et al. 2012

MATERIALS

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“…atomic layer deposition [9], chemical bath deposition [10], vacuum evaporation [11], chemical vapor deposition [12], spray pyrolysis [13], electrodeposition [14], etc. Thermal evaporation of pulverized SnSe is a simple technique, whose attractive features are the convenience for producing large-area devices, low temperature growth, enable morphological, and film thickness controlled by readily adjusting the electrical parameters.…”

Section: Introductionmentioning

confidence: 99%

Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

Kumar

Sharma

Padha

et al. 2009

Cryst. Res. Technol.

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Thin films of tin selenide (SnSe) were deposited on sodalime glass substrates, which were held at different temperatures in the range of 350-550 K, from the pulverized compound material using thermal evaporation method. The effect of substrate temperature (T s ) on the structural, morphological, optical, and electrical properties of the films were investigated using x-ray diffraction analysis (XRD), scanning electron microscopy (SEM), transmission measurements, and Hall-effect characterization techniques. The temperature dependence of the resistance of the films was also studied in the temperature range of 80-330 K. The XRD spectra and the SEM image analyses suggest that the polycrystalline thin films having uniform distribution of grains along the (111) diffraction plane was obtained at all T s . With the increase of T s the intensity of the diffraction peaks increased and well-resolved peaks at 550 K, substrate temperature, were obtained. The analysis of the data of the optical transmission spectra suggests that the films had energy band gap in the range of 1.38-1.18 eV. Hall-effect measurements revealed the resistivity of films in the range 112-20 Ωcm for films deposited at different T s . The activation energy for films deposited at different T s was in the range of 0.14 eV-0.28 eV as derived from the analysis of the data of low-temperature resistivity measurements.

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“…This behavior is also typical for p-type semiconductor working electrodes 26 and is consistent with earlier reports for SnSe electrodes. 5,9,27,28 However, both electrodes showed negative leakage currents in the dark at potentials more negative than the onset potential (Vonset), which is normally encountered in thin film electrodes. Figure 9 shows net photo current density vs. potential (J p -V) plots, calculated by subtracting the J D -V plots from the J I -V plots for both With-and Without-AGC film electrodes.…”

Section: Optical Propertiesmentioning

confidence: 95%

“…3 Thus, grain size distribution, grain shape, elemental composition, internal structure and surface chemical condition are important features for the SC thin film electrode. Different techniques have been investigated to control such features, [4][5][6][7][8][9][10][11][12] one of which is the film preparation method. The AGC thermal evaporation of a material has many advantages over other processing methods, including (i) potential deposition of many alloys with grain sizes less than 100 nm, (ii) shape similarity and narrow size distribution of particles, and (iii) easy control of film characteristics.…”

Section: Introductionmentioning

confidence: 99%

SnSe Thin Film Electrodes Prepared by Vacuum Evaporation: Enhancement of Photoelectrochemical Efficiency by Argon Gas Condensation Method

et al. 2014

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The effect of argon gas condensation (AGC) on crystallinity, surface morphology and photoelectrochemical (PEC) characteristics of SnSe thin films, prepared by thermal vacuum deposition onto ITO/glass substrates, has been investigated. The focal theme was to improve growth process of SnSe thin films and consequently enhance their PEC characteristics, by including argon gas during film manufacturing. For comparison purposes, the films grown With-and Without-AGC were characterized using various techniques such as X-ray diffractometry, UV-VIS spectroscopy, and SEM. The results indicate enhancement in film crystallinity and surface morphology by inclusion of argon gas. Such enhancement has been attributed to slower deposition rate due to argon gas presence. Photoelectrochemical property of SnSe thin film electrodes was studied using linear sweep voltammetry in dark and under illumination. The With-AGC electrodes showed higher photoactivity than the Without-AGC counterparts. Enhancement of PEC characteristics of SnSe With-AGC thin film electrodes is consistent with their crystallinity and surface uniformity. Inclusion of AGC in thermal vacuum deposition processes is potentially valuable to prepare enhanced SnSe thin film electrodes even without the need for further treatment such as etching or annealing.

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Chemical bath deposition of tin selenide thin films

Cited by 73 publications

References 25 publications

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Effect of Film Thickness on Optical Properties of Tin Selenide Thin Films Prepared by Thermal Evaporation for Photovoltaic Applications

Influence of the substrate temperature on the structural, optical, and electrical properties of tin selenide thin films deposited by thermal evaporation method

SnSe Thin Film Electrodes Prepared by Vacuum Evaporation: Enhancement of Photoelectrochemical Efficiency by Argon Gas Condensation Method

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