Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces

Lee, Hyunseop; Jeong, Hyun Do

doi:10.1016/j.cirp.2009.03.115

Cited by 81 publications

(36 citation statements)

References 8 publications

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“…However, the material removal rate (MRR) of CMP is very low (<0.5 mm/h). Recently, Jeong et al have proposed a hybrid CMP process, which uses a mixed abrasive slurry (MAS) composed of a mixture of colloidal silica slurry and nano-diamond abrasive, to increase the MRR keeping a defect-free surface [4,5].…”

Section: Introductionmentioning

confidence: 99%

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

et al. 2011

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Section: Introductionmentioning

confidence: 99%

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

et al. 2011

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“…Electron beam lithography enables extremely high resolution well within the range of grating dimensions proposed [17]. The filling material, SiO 2 in the case of GAF and TiO 2 or p-aSiC:H in the case of EG filtering concepts, could then be deposited on top of the grating followed by chemical mechanical planarization (CMP) to flatten the surface [32]. Alternatively, the original (master) e-beam fabricated grating could also be patterned in quartz and then repeatedly transferred onto either the a-SiC:H (GAF) or SiO 2 layer (EG) using step-and-flash nano-imprint lithography (NIL), which would reduce manufacturing costs while retaining good uniformity of the transferred grating texture [33][34][35][36].…”

Section: Filtering Structuresmentioning

confidence: 99%

Modelling of diffraction grating based optical filters for fluorescence detection of biomolecules

Kovačič

Krč

Lipovšek

et al. 2014

Biomed. Opt. Express

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Abstract:The detection of biomolecules based on fluorescence measurements is a powerful diagnostic tool for the acquisition of genetic, proteomic and cellular information. One key performance limiting factor remains the integrated optical filter, which is designed to reject strong excitation light while transmitting weak emission (fluorescent) light to the photodetector. Conventional filters have several disadvantages. For instance absorbing filters, like those made from amorphous silicon carbide, exhibit low rejection ratios, especially in the case of small Stokes' shift fluorophores (e.g. green fluorescent protein GFP with λ exc = 480 nm and λ em = 510 nm), whereas interference filters comprising many layers require complex fabrication. This paper describes an alternative solution based on dielectric diffraction gratings. These filters are not only highly efficient but require a smaller number of manufacturing steps. Using FEM-based optical modelling as a design optimization tool, three filtering concepts are explored: (i) a diffraction grating fabricated on the surface of an absorbing filter, (ii) a diffraction grating embedded in a host material with a low refractive index, and (iii) a combination of an embedded grating and an absorbing filter. Both concepts involving an embedded grating show high rejection ratios (over 100,000) for the case of GFP, but also high sensitivity to manufacturing errors and variations in the incident angle of the excitation light. Despite this, simulations show that a 60 times improvement in the rejection ratio relative to a conventional flat absorbing filter can be obtained using an optimized embedded diffraction grating fabricated on top of an absorbing filter.

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“…3,4 Semiconductor fabrication still maintains the main application of CMP process; however, its application is now expanding to other related industries. 5,6 The CMP can also be applied to the fabrication of multilevel circuit boards, packages, flat panel displays, flexible printed circuit boards, organic photovoltaics, etc.…”

Section: Introductionmentioning

confidence: 99%

Development of green CMP by slurry reduction through controlling platen coolant temperature

Yuh

Jang

Kim

et al. 2015

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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Chemical mechanical polishing (CMP) is currently replacing a conventional chemical etching or mechanical polishing to remove overburdened copper deposit in printed circuit board (PCB) manufacturing process owing to its ability to realize a global planarization. In order to stabilize the CMP as one of the PCB manufacturing processes, the CMP machine has been investigated. This paper introduces a newly developed Oscar-type CMP machine and copper CMP process to polish rectangular PCB with a size up to 510 mm by 510 mm, especially focused on the effect of platen coolant temperature on removal rate and removal uniformity during copper CMP to reduce the amount of slurry consumed. The CMP experiments are implemented under the coolant temperatures of 10, 15, 20, 25 and 30 o C, and the slurry flow of 600, 800, 1000 and 1200 mL/min. The experimental results show that the removal rate goes up with an increase in the platen coolant temperature during polishing at a fixed slurry flow rate, and the removal rate goes down at any fixed the platen coolant temperature when the slurry flow rate increases. It means that the reduction of thermochemical reaction rate in the chemical mechanical removal, resulting from cooling down of the copper surface when the.

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Chemical and mechanical balance in polishing of electronic materials for defect-free surfaces

Cited by 81 publications

References 8 publications

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface

Modelling of diffraction grating based optical filters for fluorescence detection of biomolecules

Development of green CMP by slurry reduction through controlling platen coolant temperature

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