Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

Qiu, Xiaoyan; Zhang, S. Y.; Zhang, T.; Wang, R. X.; Li, L. T.; Zhang, Y.

doi:10.1007/s00339-016-0326-y

Cited by 3 publications

(2 citation statements)

References 28 publications

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“…Most of the research were performed on the Ge-ncs embedded in SiO 2 [1–5], but a few studies of the Ge-ncs embedded in Al 2 O 3 [6, 7] and HfO 2 [8, 9] were done. Recently, the Ge-ncs embedded in ZrO 2 [10, 11] and TaZrO x [12] were investigated.…”

Section: Introductionmentioning

confidence: 99%

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

et al. 2017

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Ge-rich ZrO2 films, fabricated by confocal RF magnetron sputtering of pure Ge and ZrO2 targets in Ar plasma, were studied by multi-angle laser ellipsometry, Raman scattering, Auger electron spectroscopy, Fourier transform infrared spectroscopy, and X-ray diffraction for varied deposition conditions and annealing treatments. It was found that as-deposited films are homogeneous for all Ge contents, thermal treatment stimulated a phase separation and a formation of crystalline Ge and ZrO2. The “start point” of this process is in the range of 640–700 °C depending on the Ge content. The higher the Ge content, the lower is the temperature necessary for phase separation, nucleation of Ge nanoclusters, and crystallization. Along with this, the crystallization temperature of the tetragonal ZrO2 exceeds that of the Ge phase, which results in the formation of Ge crystallites in an amorphous ZrO2 matrix. The mechanism of phase separation is discussed in detail.

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Section: Introductionmentioning

confidence: 99%

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

et al. 2017

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“…Usually, amorphous Ge shows phonon peaks at about 275 cm -1 (TO), 200 cm -1 (LO-LA) and 80 cm -1 (TA) (18). These phonon modes can be distinguished not only for pure Ge films, but also for Ge-doped high-k oxides (10,13,19). Thus, one can expect to observe several peaks in the range of 50-400 cm -1 in our samples.…”

Section: Raman Scattering Spectramentioning

confidence: 99%

Whether Ge-Rich ZrO₂ and Ge-Rich HfO₂ Materials Have Similar Reaction on Annealing Treatment?

Khomenkova¹,

Lehninger²,

Agócs³

et al. 2020

ECS Trans.

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The properties of Ge-HfO2 and Ge-ZrO2 films were studied versus Ge content and annealing temperature by means of Raman scattering, FTIR and X-ray diffraction methods. Ge-HfO2 films with [Ge]<5 at.% were polycrystalline, whereas higher Ge content stabilized amorphous structure that was stable for T<600°C. The T increase caused the formation of Ge clusters and tetragonal HfO2 phase. This latter appeared at T=600-670°C, while the Ge clusters crystallized at T=700-800°C. Unlike to Ge-rich HfO2 films, as-deposited Ge-ZrO2 films and those annealed at T≤600°C were amorphous. In these films, formation of Ge clusters and their crystallization occurred at T=640-700°C depending on Ge content, whereas ZrO2 phase crystalized at T=680-700°C that allowed to form Ge nanocrystals in amorphous matrix at T=640-680°C. For T>800°C, the films showed appearance of monoclinic HfO2 or ZrO2 phases that was explained by the Ge content decrease via volatile GeO formation. Obtained results supported theoretical prediction of the stability of tetragonal phases in these oxides via Ge doping. However, our results showed also some difference in the phase separation process of Ge-rich HfO2 and Ge-rich ZrO2 upon thermal treatment.

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Non-volatile memory property of $${\text{Er}}_{2}{\text{O}}_{3}$$ Er 2 O 3 doped

Panigrahy

Dhar

2019

J Mater Sci: Mater Electron

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Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

Cited by 3 publications

References 28 publications

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

Whether Ge-Rich ZrO₂ and Ge-Rich HfO₂ Materials Have Similar Reaction on Annealing Treatment?

Non-volatile memory property of $${\text{Er}}_{2}{\text{O}}_{3}$$ Er 2 O 3 doped

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Charge storage characteristics and tunneling mechanism of amorphous Ge-doped HfOx films

Cited by 3 publications

References 28 publications

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures

Whether Ge-Rich ZrO2 and Ge-Rich HfO2 Materials Have Similar Reaction on Annealing Treatment?

Non-volatile memory property of $${\text{Er}}_{2}{\text{O}}_{3}$$ Er 2 O 3 doped

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Whether Ge-Rich ZrO₂ and Ge-Rich HfO₂ Materials Have Similar Reaction on Annealing Treatment?