Abstract:The properties of Ge-HfO2 and Ge-ZrO2 films were studied versus Ge content and annealing temperature by means of Raman scattering, FTIR and X-ray diffraction methods. Ge-HfO2 films with [Ge]<5 at.% were polycrystalline, whereas higher Ge content stabilized amorphous structure that was stable for T<600°C. The T increase caused the formation of Ge clusters and tetragonal HfO2 phase. This latter appeared at T=600-670°C, while the Ge clusters crystallized at T=700-800°C. Unlike to Ge-rich HfO2 films, as-depo… Show more
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