Charge-coupled device area detector for low energy electrons

Abstract

A fast position-sensitive detector was designed for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope (SLEEM), based on a thinned back-side directly electron-bombarded charged-coupled device (CCD) sensor (EBCCD). The principle of the SLEEM operation and the motivation for the development of the detector are explained. The electronics of the detector is described as well as the methods used for the measurement of the electron-bombarded gain and of the dark signal. The EBCCD gain of 565 for electron energy 5 keV and dynamic range 59 dB for short integration time up to 10 ms at room temperature were obtained. The energy dependence of EBCCD gain and the detection efficiency are presented for electron energy between 2 and 5 keV, and the integration time dependence of the output signals under dark conditions is given for integration time from 1 to 500 ms.

An electron Talbot interferometer

“…A Princeton Instruments PIXIS-XO camera designed for X-ray and EUV imaging was used to directly image low energy (0.3-5 keV) electrons with high sensitivity. Back-thinned, backilluminated CCDs have been used to directly detect low energy electrons before [28], but to our knowledge this work is the first time a commercially-available camera has been used to directly image electrons.…”

Proposition of a nanoscale collider experiment to examine the loss of visibility due to entanglement

“…Using A0 and replacing Ayl by W, the above inequality is expressed as 2Ir AO > k--W" (4) With the experimental conditions described here, the right-hand side amounts to 4.9 • 10 -3, which is 5 times greater than the angular size of the interferometer viewed from the collision point. In fact, (4) is written as W > 27rL/(kd) by replacing A0 by d/L, and contradicts the condition that the source should be point-like.…”