Charge collection properties of a CdTe Schottky diode for x- and γ-rays detectors

Abstract

The electrical characteristics of x-ray and γ -ray detectors with Schottky diodes on the basis of CdTe crystals of n-type conductivity with a resistivity of 10 2 -10 3 cm (300 K) are investigated. The necessary parameters of the diode structures are determined to interpret the detection characteristics of the detectors. The dependences of the charge-collection efficiency in the detectors on the carrier lifetime and concentration of uncompensated donors are obtained and the conditions for the total collection of charges generated by the photon absorption are established. Taking into account drift and diffusion photocurrent components, the spectral distribution of the quantum detection efficiency is calculated. The comparative analysis of the detection efficiency of Schottky diodes based on low-resistivity p-CdTe and n-CdTe shows the advantages of the latter, especially in a low x-ray energy region.

Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectors

“…lations since, in the transfer of an electron from point x to point x = 0 and of a hole from point x to point x = W, the varying field strength E can be replaced by mean values in these portions [8]:…”

A Study of Photo-response and Photoelectrical properties of Cadmium Telluride Thin Film

“…Moreover, the gap type film configuration is more favourable for direct photo-response and photoelectrical study. The CdTe thin films technology have been used in a large number of applications in solid-state device and energy related application such as solar cells, IR detector, photo-detectors and LASER [7][8][9][10][11][12][13][14][15][16][17][18] characterise the defect levels and their influence on the physical behaviour is insufficient for a better understanding of SCLC mechanism.…”

Capabilities of CdZnTe‐based Schottky diodes for detection of optical and X/γ‐ray radiation

“…Since the electric field strength E in the space charge region depends linearly on the coordinate, the value of E can be replaced by the average values of the electric field strength in the range (x,W) for electrons and in the range (0,x) for holes [7]. The number of photons absorbed by a layer of thickness dx at the distance x from the front surface of the detector can be presented as…”