Capabilities of CdZnTe‐based Schottky diodes for detection of optical and X/γ‐ray radiation

Abstract

The electrical and photoelectric properties of Schottky diodes based on low‐resistivity (ρ = 103‐104 Ω·cm) and semi‐insulating (ρ ≈ 107 Ω·cm) Cd1‐xZnxTe (x = 0‐0.2) single crystals are investigated and use of the diodes as detectors, respectively, for optical and X‐ and γ‐ray radiation is analyzed. The charge transport properties of both types of Schottky diodes are shown to be governed by generation‐recombination in the space‐charge region in the frame of the Sah‐Noyce‐Shockley theory. The detection spectrum of Cd1–x Znx Te‐bassed X/γ‐ray detectors with Schottky diodes is studied. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Laser-Induced Modification of Properties of CdZnTe Crystals

“…The efficiency of detectors depends on the quality of detector-grade CZT single crystals and electrical contact design. The properties of metal-CZT interfaces are strongly affected by treatments of the crystal surface before electrode deposition, therefore surface processing plays a major role in fabrication of CZTbased X/γ-ray detectors [3][4][5][6]. The maximum applied bias voltage in CZT-based detectors is often limited by the surface conductivity, therefore to achieve a low leakage current, different surface processing techniques are employed in the fabrication of detectors with two Ohmic contacts or developed as a diode structure with a Schottky barrier or electrical junction (p-n, p-i-n, etc.)…”

“…The maximum applied bias voltage in CZT-based detectors is often limited by the surface conductivity, therefore to achieve a low leakage current, different surface processing techniques are employed in the fabrication of detectors with two Ohmic contacts or developed as a diode structure with a Schottky barrier or electrical junction (p-n, p-i-n, etc.) [2][3][4][5][6][7][8].…”