Charge and Interface State Generation in Field Oxides

Boesch, H. E.; Taylor, Thomas L.

doi:10.1109/tns.1984.4333495

Cited by 53 publications

(17 citation statements)

References 14 publications

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“…As a result, practically instantaneous generation of p occurred for subsequent measurement. When the total dose D is accumulated over time, as it is in the natural space environment, (1)(2)(3)(4)(5)(6)(7)(8)(9) it can be expected that electric field compensation due to accumulated positive charge will be significant even at very low D. Thus, in general, it can be expected that p cr i t will be less than that given by (1)(2)(3)(4)(5)(6)(7)(8), and the corresponding maximum values of N ot and AV ot predicted by (1-3) through…”

Section: Comments On Extension Of Results To Space Dose Ratesmentioning

confidence: 99%

“…Charge buildup in thick field oxides has not received as much attention as charge buildup in gate oxides. Charge buildup in field oxides has, however, been shown to be governed by the same physical processes as gate oxides [9]. In general, the charge buildup process is a function of oxide thickness, electric field magnitude and direction in the oxide, charge already present in the oxide, available trapping centers in the oxide, their capture cross sections, and a score of other parameters.…”

Section: Positive Charge Buildup In Thick Oxidesmentioning

confidence: 99%

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The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

Kosier

Schrimpf

Cellier

et al. 1990

IEEE Trans. Nucl. Sci.

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Section: Comments On Extension Of Results To Space Dose Ratesmentioning

confidence: 99%

Section: Positive Charge Buildup In Thick Oxidesmentioning

confidence: 99%

The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

Kosier

Schrimpf

Cellier

et al. 1990

IEEE Trans. Nucl. Sci.

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“…[173,174] the measurement of the electric field dependence of interface state build-up in thick oxides is complicated by the conflicting requirements to use a low dose rate to minimize the pertubation of the internal oxide field by space charge build-up and to use higher doses in order to minimize error in the measurement of D it . The electric field in the oxide is almost surely grossly pertubated for doses above 100 Gy.…”

Section: The N-mosfet Irradiated With E F Ield Pointing From the Sio mentioning

confidence: 99%

Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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PROF. DR. MICHAEL POTTHOFFii "Τὸν δὲ νοῦ καί ἐπιστήμης ἐραστὴν ἀνάγκη τὰς τῆς ἔμφρονος φύσεως αἰτίας πρώ-τας μεταδιώκειν." Πλάτωνος, Τίμαιος, Κεφ. 16 "The lover of reason and knowledge must first seek for the causes which belong to the rational order."Plato, Timaeus, Ch. 16 iii To my parents. . . iv AbstractSilicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface.In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

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“…The interface states density increases with the radiation dose as a function of the electric field E IR , the processing parameters and the dose range [4,25,34].…”

Section: Thick Oxide Mos Transistors For Ionizing Radiation Dosementioning

confidence: 99%

Thick oxide MOS transistors for ionizing radiation dose measurement

Sarrabayrouse

Gessinn

1994

Radioprotection

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The main properties of metal-oxide-silicon radiation dosemeters are described and the results obtained in terms of sensitivity and stability with thick oxide layers are given. Possible methods for improving their sensitivity are briefly discussed. RÉSUMÉLes principales propriétés des dosimètres de rayonnement métal-oxyde-semiconducteur (MOS) sont décrites. Nous présentons les résultats obtenus pour la sensibilité et la stabilité des dosimètres à oxyde de grille épais qui montrent que ce composant a des applications en dosimetric des personnels et en médecine. Nous discuterons brièvement les améliorations possibles de la sensibilité.

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Charge and Interface State Generation in Field Oxides

Cited by 53 publications

References 14 publications

The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

Surface effects in segmented silicon sensors

Thick oxide MOS transistors for ionizing radiation dose measurement

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