Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

Hur, Jae; Luo, Yuan-Chun; Wang, Zheng; Lombardo, Sarah; Khan, Asif Islam; Yu, Shimeng

doi:10.1109/jxcdc.2021.3130783

Cited by 14 publications

(4 citation statements)

References 15 publications

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“…In this work, we use a FE (HZO) layer thickness of 10 nm and a write voltage of ±3.5 V for model calibration. FE parameters, viz., remnant polarization (P r ), saturation polarization (P s ), and coercive voltage of FE material (V c ) are extracted from the measured polarization-voltage characteristics at different temperatures 45 and are summarized in Table 3.…”

Section: Methodsmentioning

confidence: 99%

Cryogenic Brain-inspired Hyperdimensional In-Memory Computing using 5nm Ferroelectric FinFET

Parihar,

Kumar,

Chatterjee

et al. 2024

Preprint

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The pursuit of large-scale quantum computing has captivated the scientific community, and the potential of cryogenic circuits using mature CMOS technologies represents a significant step forward in this quest. Nevertheless, the operation of circuits at cryogenic temperatures poses significant challenges due to the strict power and timing constraints. These challenges are compounded by the well-known Von Neumann bottleneck that plays a major role in limiting the throughput and energy efficiency of modern computing systems. To overcome such a bottleneck, In-Memory Computing (IMC) is rapidly emerging as a promising solution for creating hardware accelerators that go far beyond Von Neumann principles, offering substantial efficiency improvements. In this work, we investigate the effectiveness of cryogenic brain-inspired hyperdimensional IMC using emerging Ferroelectric (FE) technologies at the 5 nm node. To achieve that, we begin by characterizing commercial 5 nm FinFETs from room temperature (300 K) down to cryogenic temperature (10 K). Then, we carefully calibrate the first industry-standard cryogenic-aware compact model (BSIM-CMG) to accurately reproduce the measurements. Afterward, we incorporate a physics-based FE model within the BSIM-CMG model and calibrated it against FE capacitor measurements to realize Fe-FinFET devices operating from 300 K down to 10 K. Then, as proof of concept, we focus on 1×8 Ternary Content Addressable Memory (TCAM) array that we use to perform the language classification using brain-inspired hyperdimensional IMC. Our comprehensive analysis spans from investigating the delay, power, and energy efficiency of IMC-based TCAM all the way up to calculating error probabilities in which we compare the figure of merits obtained from the emerging Fe-FinFET against classical FinFET-based IMC.

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Section: Methodsmentioning

confidence: 99%

Cryogenic Brain-inspired Hyperdimensional In-Memory Computing using 5nm Ferroelectric FinFET

Parihar,

Kumar,

Chatterjee

et al. 2024

Preprint

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“…Reduction of stress‐induced leakage current (SILC) at lower temperature contributes to improving the performance of cycling endurance. [ 10 ] In Figure 7b, the I ON / I OFF is roughly ten times enhanced at 77 K compared with at RT due to the steep SS.…”

Section: Device Characteristics Of Sons Cell At 77 Kmentioning

confidence: 99%

Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance

Hur¹,

Kang²,

Moon³

et al. 2023

Adv Elect Materials

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Cryogenic‐computing draws attention due to its variety of applications such as cloud‐computing, aerospace electronics, and quantum computing. Low temperature (e.g., 77 K) enables higher switching speed, improved reliability, and suppressed noise. Although cryogenic dynamic random‐access memory is studied, the cryogenic NAND flash is not explored intensively. Herein, a cryogenic storage memory based on the charge‐trap mechanism is reported. By removing the tunneling oxide from the conventional silicon/oxide/nitride/oxide/silicon (SONOS)‐type flash memory (therefore becoming silicon/oxide/nitride/silicon (SONS)), high‐speed and low‐power operation is aimed to be achieved while relieved from poor retention issue thanks to the cryogenic environment. The FinFET‐structured SONS memory device is demonstrated experimentally with gate length of 20–30 nm, which can achieve the retention issue (>10 years) with low voltage (≈6.5 V) and high speed (≈5 µs) operation at 77 K. To have a holistic system‐level evaluation, benchmark simulation of an interface between a host microprocessor and solid‐state‐drive is conducted, considering the refrigerator cooling cost and the heat loss via cables across two temperatures (300 and 77 K). The results show that the SONS‐type cryogenic storage system shows over 81% improvement in both latency and power, compared to the SONOS counterpart located at cryogenics.

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“…Müller et al investigated the tempera-ture-dependent polarization-electric field (P−E) hysteresis in Hf 0.3 Zr 0.7 O 2 thin films and observed a transition from anti-ferroelectric-like to ferroelectric behavior with the temperature decreasing from 230 to 80 K [7] . Henry et al first demonstrated ferroelectric switching in Hf 0.58 Zr 0.42 O 2 thin films with NbN electrodes at 4 K [8] . Moreover, Hur et al thoroughly characterized the electrical performance of Hf 0.5 Zr 0.5 O 2 ferroelectric capacitors with TiN electrodes from 400 to 4 K [9] .…”

Section: Introductionmentioning

confidence: 99%

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Wu,

Cao,

Jiang

et al. 2024

J. Semicond.

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The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics. In this work, TiN/Hf0.5Zr0.5O2/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature (300 K) to cryogenic temperature (30 K). We observe a consistent decrease in permittivity (ε r) and a progressive increase in coercive electric field (E c) as temperatures decrease. Our investigation reveals exceptional stability in the double remnant polarization (2P r) of our ferroelectric thin films across a wide temperature range. Specifically, at 30 K, a 2P r of 36 µC/cm2 under an applied electric field of 3.0 MV/cm is achieved. Moreover, we observed a reduced fatigue effect at 30 K in comparison to 300 K. The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO2 based ferroelectric thin films for cryo-electronics applications.

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Characterizing Ferroelectric Properties of Hf_0.5Zr_0.5O₂ From Deep-Cryogenic Temperature (4 K) to 400 K

Cited by 14 publications

References 15 publications

Cryogenic Brain-inspired Hyperdimensional In-Memory Computing using 5nm Ferroelectric FinFET

Cryogenic Brain-inspired Hyperdimensional In-Memory Computing using 5nm Ferroelectric FinFET

Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

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Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

Cited by 14 publications

References 15 publications

Cryogenic Brain-inspired Hyperdimensional In-Memory Computing using 5nm Ferroelectric FinFET

Cryogenic Brain-inspired Hyperdimensional In-Memory Computing using 5nm Ferroelectric FinFET

Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

Contact Info

Product

Resources

About

Characterizing Ferroelectric Properties of Hf_0.5Zr_0.5O₂ From Deep-Cryogenic Temperature (4 K) to 400 K

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition