Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition
Shuyu Wu,
Rongrong Cao,
Hao Jiang
et al.
Abstract:The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics. In this work, TiN/Hf0.5Zr0.5O2/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature (300 K) to cryogenic temperature (30 K). We observe a consistent decrease in permittivity (ε
r) and a progressive increase in coercive electric field (E
c) as temperatures decrease. Our inv… Show more
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