2007
DOI: 10.1016/j.materresbull.2006.09.001
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Characterization of ZnO-degraded varistors used in high-tension devices

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Cited by 29 publications
(30 citation statements)
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“…2a-d). Ramîrez found that the potential barrier formed in the region between two adjacent ZnO grains is more effective than that in the spinel-ZnO junction [25], which means the ZnO grains surrounded by the bismuth oxide and spinel phases present a larger number of non-effective barriers. Furthermore, the decrease of breakdown voltage per grain boundary (V gb ) is also responsible for the decrease of E 1 mA=cm 2 .…”
Section: Resultsmentioning
confidence: 99%
“…2a-d). Ramîrez found that the potential barrier formed in the region between two adjacent ZnO grains is more effective than that in the spinel-ZnO junction [25], which means the ZnO grains surrounded by the bismuth oxide and spinel phases present a larger number of non-effective barriers. Furthermore, the decrease of breakdown voltage per grain boundary (V gb ) is also responsible for the decrease of E 1 mA=cm 2 .…”
Section: Resultsmentioning
confidence: 99%
“…In ZnO.Bi 2 O 3 -based varistor systems, changes also occur in both phases, the amorphous and crystalline phase of Bi 2 O 3 during the processing or its useful life 7,20 . The varistors submitted to different stresses during use can modify its crystalline structure, which can cause the degradation process 7 . Figures 4a and 4b show Nyquist complex impedance diagrams for ZPC system with 0.1 and 1 mol% of Pr 6 O 11 and sintered at 1300 and 1350 °C respectively.…”
Section: Resultsmentioning
confidence: 99%
“…In fact, the history of Pr 6 O 11 -based ZnO varistors is similar to the Bi 2 O 3 -based ZnO varistors 5 , but they have not been adequately studied. However, the Pr 6 O 11 -based ZnO varistors don't have volatilization of components 3 and they own a simpler microstructure when compared with Bi 2 O 3 -based varistors, which is an important fact for the stability and degradation phenomena [6][7][8][9] . Most of commercial ZnO varistors are ZnO-Bi 2 O 3 -based varistor ceramics, possessing as major additive Bi 2 O 3 .…”
Section: Introductionmentioning
confidence: 99%
“…La formulación de estos cerámicos basados en ZnO comprende un complejo sistema multicomponente en el cual los dopantes juegan un papel muy importante, y debido a que el comportamiento varistor se origina en la estructura electrónica de los bordes de grano, la manipulación y el control de la microestructura en los bordes de grano se ve reflejada directamente en el desempeño eléctrico del varistor (4)(5)(6)(7)(8). Así por ejemplo para aplicaciones de alto voltaje se requiere de una microestructura fina constituida por pequeños granos de ZnO, para lo cual se incorpora Sb 2 O 3 como inhibidor del crecimiento de dichos granos, sistema ZnO-Bi 2 O 3 -Sb 2 O 3 (9)(10)(11)(12). Por el contrario los varistores de bajo voltaje se caracterizan por una microestructura de granos gruesos, y para ello se suele añadir TiO 2 como dopante promotor del crecimiento de grano, sistema ZnO-Bi 2 O 3 -TiO 2 (13)(14)(15)(16)(17).…”
Section: Introductionunclassified