2015
DOI: 10.1016/j.ceramint.2015.05.120
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Effect of Zn doping on stability of ZnO varistors under high pulse-current stress

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Cited by 11 publications
(2 citation statements)
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References 25 publications
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“…On the contrary, the trapping away of interstitials far from the GBs can occur during the cooling of ZnO-based systems. This phenomenon can have a significant impact on the stability of MOVs [ 159 ].…”
Section: Considerations Of the Crystalline Structure And Physics Of Z...mentioning
confidence: 99%
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“…On the contrary, the trapping away of interstitials far from the GBs can occur during the cooling of ZnO-based systems. This phenomenon can have a significant impact on the stability of MOVs [ 159 ].…”
Section: Considerations Of the Crystalline Structure And Physics Of Z...mentioning
confidence: 99%
“…The degradation rate of the MOVs from the ZnO-based systems can be reduced when the Zn i density is lower, since Zn i represents the major intrinsic point defect species that generates the electrical degradation of MOVs under DC or AC electrical and thermal stresses [ 159 , 201 ]. Additionally, the Zn i density is an effective parameter for investigating the electrical degradation of ZnO-based varistors at a macroscopic level.…”
Section: Properties Of Disc-shaped Movs From Zno-v 2 ...mentioning
confidence: 99%