Characterization of W-Band CW Tunnett Diode

Pobl, M.; Freyer, J.

doi:10.1109/euma.1991.336557

Cited by 3 publications

(2 citation statements)

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“…Pulsed oscillations have been demonstrated up to 338 GHz [l]. Recently advances in MBE techniques have been exploited to obtain promising CW power from devices with low impact ionization carrier multiplication [2].We have successfully designed and tested p+n+n-n+ single-drift TUNNETT diodes for V-band (50-75 GHz) and W-band (75-110 GHz) operation. The basic structure and electric field profile of the device is given in Figure 1.…”

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Design, fabrication and evaluation of tunnel transit-time diodes for V-band and W-band power generation

Kidner

Eisele

East

et al.

1992 IEEE Microwave Symposium Digest MTT-S

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T U N N E l injection Transit-Time ( T U N N E T T ) diodes are very promising for m e d i u m power, low noise applications up to THz frequencies.We have successfully designed a n d tested G a A s p+n+n-n+ single-drift T U N N E T T diodes for V-band a n d W-band operation. We have measured 26 mW at 58.0 GHz and 33 mW at 93.5 GHz with good spectra.TUNNEl injection Transit-rime (TUNNETT) diodes are a promising technology for low noise, medium power millimeter and submillimeter wave sources. The tunneling process is very fast and localized, and thus TUNNETT diodes are expected not to show the high frequency electronic limitations of m a c t ionization Avalanche Transit-Time (IMPATT) diodes. The tunneling process is also relatively quiet, making TUNNETT diodes a prime candidate for low noise applications. Pulsed oscillations have been demonstrated up to 338 GHz [l]. Recently advances in MBE techniques have been exploited to obtain promising CW power from devices with low impact ionization carrier multiplication [2].We have successfully designed and tested p+n+n-n+ single-drift TUNNETT diodes for V-band (50-75 GHz) and W-band (75-110 GHz) operation. The basic structure and electric field profile of the device is given in Figure 1. Both designs operated within the range of frequencies expected. The V-band devices produced 26 mW at 58 GHz with 1.4 %efficiency. The W-band devices produced 33 mW at 93.5 GHz with 2.65 % efficiency.The oscillations have a clean spectrum. W-band GaAs IMPATT devices have demonstrated very low noise operation [3]. Tunneling is expected to be a much quieter injection mechanism than impact ionization, resulting in a device with still lower noise levels. TUNNETT diodes are very promising for medium power, low noise applications up to THz frequencies [4].The layer sequences for the V-band and W-band designs are shown in Figure 2. The design of the structiirc E P t i I I I c Figure 1: Nominal Structure and Electric Field Profile of a p++n+n+n++ single-drift TUNNETT Diode was based on experimental studies of highly doped MBEgrown p++n+ junctions. The p++ doping is as high its the available technology allows in order to give a one sided junction. The n+ doping is a trade off between avoiding impact ionization and a backward diode. The length of the n+ region is to give the proper field at the beginning of the drift region. The drift region wils designed to have a length of 37r 14 at the nominal operating frequency using a drift velocity of 4 . 6~1 0~ cm/s at 500 K and high fields [5, 61. The doping level in the drift region is a trade off between avoiding impact ionization and space charge effects while maintaining fields sufficient for saturated drift velocity. The Al.ssGa.4sAs layer allows the GaAs substrate to be removed using a selective etch process.The devices were fabricated from MBE grown material. Evaporated Ti/Pt/Au was used for the p-ohmic contact. Gold was electroplated onto the p-ohmic to create an integral heat sink and to provide mechanical strength. The GaAs substrate and the Al.ssG...

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