Characterization of Transparent Conducting Oxides

Coutts, T. J.; Young, David L.; Li, Xiaonan

doi:10.1557/mrs2000.152

Cited by 370 publications

(223 citation statements)

References 10 publications

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“…, the Drude model can be generally used to represent the decrease in the transmittance [23][24][25]. Briefly, the model indicates that the transmittance drop in the near infrared region is associated with the plasma frequency (ω p ) that can be expressed as follows:…”

Section: Methodsmentioning

confidence: 99%

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Hammad

Hejazy

2012

Int Nano Lett

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Antimony-doped tin oxide (ATO) thin films were prepared by dip coating method. The effect of antimony doping on the structural, electrical, and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl 2 ·4H 2 O) and antimony(III) chloride (SbCl 3 ) were used as a host and a dopant precursor, respectively. X-ray diffraction analysis showed that the non-doped SnO 2 thin film had a preferred (211) orientation, but as the Sb doping concentration increased, a preferred (200) orientation was observed. The lowest resistivity (about 5.4 × 10 −3 Ω cm) was obtained for Sb-doped films at 2 at.%. Antimony doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance of ATO films was observed to increase to 96% at 2 at.% Sb doping, and then, it was decreased for a higher level of antimony doping.

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Section: Methodsmentioning

confidence: 99%

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Hammad

Hejazy

2012

Int Nano Lett

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“…Among possible routes to avoid compromising the optical transparency [4,5] is to enhance conductivity via mobility of the free carriers rather than their concentration. Recently, the mobility with more than twice the value of the typical commercial TCO materials such as Sn-doped indium oxide (ITO) was observed in Mo-doped In 2 O 3 (IMO), and it was shown that the conductivity can be significantly increased with no changes in the spectral transmittance upon doping with Mo [6,7,8,9].…”

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confidence: 99%

Magnetically Mediated Transparent Conductors:In2O3Doped with Mo

Medvedeva

2006

Phys. Rev. Lett.

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First-principles band structure investigations of the electronic, optical and magnetic properties of Mo-doped In2O3 reveal the vital role of magnetic interactions in determining both the electrical conductivity and the Burstein-Moss shift which governs optical absorption. We demonstrate the advantages of the transition metal doping which results in smaller effective mass, larger fundamental band gap and better overall optical transmission in the visible -as compared to commercial Sndoped In2O3. Similar behavior is expected upon doping with other transition metals opening up an avenue for the family of efficient transparent conductors mediated by magnetic interactions. PACS number(s): 71.20.-b

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“…It has many advantageous properties such as low resistivity, high transparency in the visible light wavelength, and long-term stability [2]. Several methods have been employed successfully to deposit ITO films.…”

Section: Introductionmentioning

confidence: 99%

Effects of Deposition Parameters and Oxygen Addition on Properties of Sputtered Indium Tin Oxide Films

Munir¹,

Wibowo²,

Ho³

2013

MST

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Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222) to (400) and (440), as well as higher surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10 -4 Ω•cm was obtained at 750 nm film thickness. The films' resistivity was increased by addition of oxygen up to 2% in the argon sputtering gas. All films showed over 85% transmittance in the visible wavelength range, possible for applications in photovoltaic and display devices. AbstrakEfek Parameter Deposisi dan Penambahan Oksigen terhadap Sifat-sifat Lapisan Tipis Indium Timah Oksida Hasil Sputtering. Lapisan tipis indium timah oksida (ITO) dideposisikan pada substrat gelas corning dengan metode sputtering menggunakan gas argon. Parameter deposisi dan penambahan oksigen dalam gas sputtering dioptimasi untuk mendapatkan tingkat transparansi lapisan tertinggi dan resistivitas listrik terendah melalui pengamatan struktur, sifat listrik dan sifat optik. Peningkatan laju deposisi dan ketebalan lapisan menghasilkan perubahan orientasi kristalografi dari (222) ke (400) dan (440), serta peningkatan kekasaran permukaan lapisan. Pemanasan substrat sangat diperlukan untuk mendapatkan lapisan tipis dengan kristalinitas yang lebih baik. Nilai resistivitas lapisan cenderung naik dengan penambahan oksigen hingga 2% dalam gas sputtering, dengan nilai resistivitas terendah sebesar 5.36 x 10 -4 Ω•cm dapat dicapai pada ketebalan lapisan 750 nm. Semua lapisan tipis yang dideposisi pada penelitian ini menunjukkan transparansi lebih dari 85% sehingga memungkinkan untuk diaplikasikan pada divais fotovoltaik dan display.

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Characterization of Transparent Conducting Oxides

Cited by 370 publications

References 10 publications

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Magnetically Mediated Transparent Conductors:In2O3Doped with Mo

Effects of Deposition Parameters and Oxygen Addition on Properties of Sputtered Indium Tin Oxide Films

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