Characterization of the plasma in a radio-frequency magnetron sputtering system

Palmero, Alberto; Hattum, E.D. van; Arnoldbik, W.M.; Vredenberg, A. M.; Habraken, F.H.P.M.

doi:10.1063/1.1728295

Cited by 27 publications

(28 citation statements)

References 19 publications

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“…Numerous works in the literature have dealt with the fundamentals of MS deposition at normal incidence [289][290][291][292][293][294][295]. From this, it is known that classical MS depositions, in which the growth surface is parallel to the target, usually yield dense and compact films, thanks mostly to the high energy of the deposition particles and the impingement of plasma ions during growth [296,297].…”

Section: Magnetron Sputtering Deposition At Oblique Anglesmentioning

confidence: 99%

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

Barranco

Borrás

González‐Elipe

et al. 2016

Progress in Materials Science

599

436

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a b s t r a c tThe oblique angle configuration has emerged as an invaluable tool for the deposition of nanostructured thin films. This review develops an up to date description of its principles, including the atomistic mechanisms governing film growth and nanostructuration possibilities, as well as a comprehensive description of the applications benefiting from its incorporation in actual devices. In contrast with other reviews on the subject, the electron beam assisted evaporation technique is analyzed along with other methods operating at oblique angles, including, among others, magnetron sputtering and pulsed laser or ion beam-assisted deposition techniques. To account for the existing differences between deposition in vacuum or in the presence of a plasma, mechanistic simulations are critically revised, discussing well-established paradigms such as the tangent or cosine rules, and proposing new models that explain the growth of tilted porous nanostructures. In the second part, we present an extensive description of applications wherein oblique-angle-deposited thin films are of relevance. From there, we proceed by considering the requirements of a large number of functional devices in which these films are currently being utilized (e.g., solar cells, Li batteries, electrochromic glasses, biomaterials, sensors, etc.), and subsequently describe how and why these nanostructured materials meet with these needs.

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Section: Magnetron Sputtering Deposition At Oblique Anglesmentioning

confidence: 99%

Perspectives on oblique angle deposition of thin films: From fundamentals to devices

Barranco

Borrás

González‐Elipe

et al. 2016

Progress in Materials Science

599

436

View full text Add to dashboard Cite

show abstract

“…[23][24][25] More advanced measurements in HiPIMS have been conducted with the emissive probe technique to map the plasma potential in the radial-axial plane during the HiPIMS pulses. 26,27 Measurements of plasma potential for pulsed mid-frequency MS [28][29][30] and radio-frequency MS 31,32 are also available. The literature provides plentiful information on plasma potential measurements in magnetron discharges.…”

Section: Introductionmentioning

confidence: 99%

Plasma potential of a moving ionization zone in DC magnetron sputtering

Panjan

Anders

2017

Journal of Applied Physics

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Using movable emissive and floating probes, we determined the plasma and floating potentials of an ionization zone (spoke) in a direct current magnetron sputtering discharge. Measurements were recorded in a space and time resolved manner, which allowed us to make a three-dimensional representation of the plasma potential. From this information we could derive the related electric field, space charge, and the related spatial distribution of electron heating. The data reveal the existence of strong electric fields parallel and perpendicular to the target surface. The largest E-fields result from a double layer structure at the leading edge of the ionization zone. We suggest that the double layer plays a crucial role in the energization of electrons since electrons can gain several 10 eV of energy when crossing the double layer. We find sustained coupling between the potential structure, electron heating, and excitation and ionization processes as electrons drift over the magnetron target. The brightest region of an ionization zone is present right after the potential jump, where drifting electrons arrive and where most local electron heating occurs. The ionization zone intensity decays as electrons continue to drift in the Ez × B direction, losing energy by inelastic collisions; electrons become energized again as they cross the potential jump. This results in the elongated, arrowhead-like shape of the ionization zone. The ionization zone moves in the –Ez × B direction from which the to-be-heated electrons arrive and into which the heating region expands; the zone motion is dictated by the force of the local electric field on the ions at the leading edge of the ionization zone. We hypothesize that electron heating caused by the potential jump and physical processes associated with the double layer also apply to magnetrons at higher discharge power, including high power impulse magnetron sputtering.

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“…The argon concentration in the film amounts to $4.0 at.%, independent of the applied power, and appears therefore independent of the growth rate. With a variation in the applied RF power also the Ar + ion flux varies, but only to a limited extent [4]. Fig.…”

Section: Argonmentioning

confidence: 96%

“…With the projected range of argon ions of 0.5-1 nm, with a growth rate of the order of 0.3 nm/s and an estimated ion flux of 10 16 /(cm 2 s) (see references [3,4]), the surface layer of the growing film experiences a total ion fluence of 1.5 Â 10 18 /cm 2 before it is buried and has become unreachable for the ions. The measured concentration of argon in the silicon film (x % 0.03) amounts to 4 at.%, so the corresponding areal density of argon in the 1-2 nm top layer amounts to (2-4) Â 10 14 cm À2 .…”

Section: Argonmentioning

confidence: 99%

“…The energy of the impinging ions depends on the pressure and power, and is closely related to the plasma potential, which in our unbalanced RF magnetron setup, where the anode is grounded, amounts to several tens of volts [4,5]. These positive ions are created at the substrate side of the plasma potential maximum in the so-called afterglow region.…”

Section: Introductionmentioning

confidence: 99%

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