On the argon and oxygen incorporation into SiOx through ion implantation during reactive plasma magnetron sputter deposition

Research on the Preparation Methods of Silicon Oxide Thin Films

“…But the reactive magnetron sputtering in the last century before the age of 90, usually using the DC sputtering power supply, so bring some problems, mainly caused by the ignition of target poisoning and sputtering process instability, and the film a higher defect density, which have limited its application development. With the power of improvement and research, the magnetron sputtering silicon oxide thin film technology promising [10][11][12] .Dong Feng et al [13] , by magnetron sputtering technology to SiO 2 as targets, Ar gas for the radio source, in the SiOx films prepared on PET substrate. Of different discharge power, argon gas flow rate, deposition time and other parameters on the barrier properties of SiOx films.…”

SiOx by magnetron sputtered revisited: Tailoring the photonic properties of multilayers

“…This feature and its capacity for direct integration into micro-or even nano-microfluidic devices [64,65] (a rough estimation of liquid volume required to fill the pore volume of the BM renders a liquid volume of 4•10 -5 cm 3 for a photonic structure of 1micron thickness covering an area of 1cm 2 ) or at the tip of suitable optical fibres are additional advantages of this kind of optofluidic 1D-photonic structures made of SiO x thin films prepared by MS. In this work, we have demonstrated that this technique, developed more than a decade ago for the preparation of SiO x thin films in compact form [18][19][20][21][22][23][24][25][26], can be efficiently modified when working in an oblique angle configuration to control both stoichiometry and porosity of SiO x thin films. The possibilities of this new approach have been demonstrated for the fabrication of complex photonic structures which successfully compete with classical electrochemical methods [1][2][3][4][52][53][54] for the fabrication of label free sensor devices.…”

“…In general, most fabrication methodologies including MS and electrochemical etching of silicon provide a good control over the stoichiometry of compact films, but are not well-suited for simultaneously tailoring film porosity, nanostructure and stoichiometry. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] These limitations have been overcome in the present work thanks to a new thin film synthesis procedure consisting of the room temperature reactive magnetron sputtering deposition (r-MS) at oblique angles (r-MS-OAD) that permits simultaneously tuning both film porosity and O/Si ratio. For electron beam evaporated OAD films, the dependence between nanocolumnar structure and deposition conditions has been amply discussed in literature [29,30] and used for the fabrication of Si or SiO x thin films with controlled nanocolumnar microstructure.…”