Characterization of the Open-Ended Coaxial Probe Used for Near-Field Measurements in Emc Applications

Baudry, David; Louis, Anne; Mazari, B.

doi:10.2528/pier05112501

Cited by 78 publications

(34 citation statements)

References 8 publications

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“…We underline that in this case, the measurement was carried out in 50 minutes. We point out that the other elements of the test bench used were shielded in order to avoid the perturbation [32,36]. This was initially done with passive structures, and the obtained magnetic fields were validated with simulations performed with standard commercial tools.…”

Section: Description Of Soft and Control Elementsmentioning

confidence: 99%

“…At the IRSEEM laboratory, a NF scan test bench for electronic components and electrical systems was developed [36]. In this scope, the experimentation of the magnetic NF behavior attracts particularly our attention.…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, the modeling and simulation methods require more reliable practical investigation from efficient experimentations. So, different scanning techniques of EM NF were proposed [27][28][29][30][31][32][33][34][35][36]. But most of the existing measurement techniques are not completely mature for the EM NF radiation characterization of low frequency electrical and power electronic devices.…”

Section: Introductionmentioning

confidence: 99%

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Experimental Investigation on the Power Electronic Transistor Parameters Influence to the Near-Field Radiation for the Emc Applications

Manjombe¹,

Azzouz²,

Baudry³

et al. 2011

PIER M

Self Cite

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Abstract-With the increases of the module integration density and complexity in electrical and power electronic systems, serious problems related to electromagnetic interference (EMI) and electromagnetic compatibility (EMC) can occur. For the safety, these disturbing effects must be considered during the electronic equipment design process. One of the concerns on EMC problems is induced by unintentional near-field (NF) radiations. The modeling and measurement of EM NF radiations is one of the bottlenecks which must be overcome by electronic engineers. To predict the unwanted different misbehaviors caused by the EM radiation, NF test benches for the reconstitution of scanning maps at some millimeters of electrical/electronic circuits under test were developed at the IRSEEM laboratory. Due to the difficulty of the design with commercial simulators, the prediction of EM NF emitted by active electronic systems which are usually based on the use of transistors necessitates more relevant and reliable analysis techniques. For this reason, the main focus of this article is on the experimental analysis of EM NF radiated by an MOSFET transistor with changing electrical parameters. Descriptions of the experimental test bench for the EM map scan of transistors radiation are provided. This experimental setup allows not only to detect the EM NF emission but also to analyze the influence of the excitation signal parameters as the cyclic ratio. It is found that the magnetic radiation is maximal when the cyclic ratio is close to 50%. In the future, the technique introduced in this article can be used to evaluate the EM radiation of embedded electronic/electrical devices in order to improve the safety and security of electronic systems.

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Section: Description Of Soft and Control Elementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Experimental Investigation on the Power Electronic Transistor Parameters Influence to the Near-Field Radiation for the Emc Applications

Manjombe¹,

Azzouz²,

Baudry³

et al. 2011

PIER M

Self Cite

View full text Add to dashboard Cite

show abstract

“…Our current test bench is not sufficient to characterize the electromagnetic radiation due to a lack of spatial resolution. The coaxial probes that we have developed for EMC applications have a spatial resolution of 500 µm for monopole and around 1 mm for dipole probes which do not give enough experimental data with microelectronic components [7][8][9][10]. The optical probes can reach a spatial resolution under 100 µm and thus suitable for measuring microelectronic devices [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Improvement of Electrical Near-Field Measurements With an Electro-Optic Test Bench

David¹,

Baudry²,

Louis³

2012

PIER B

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Abstract-In this paper, two different kinds of near-field measurement techniques are presented. The first one uses coaxial probes that do not give precise measurements on microelectronic devices. We saw in [1] that the spatial resolution of these probes reaches 500 µm for monopole and is millimetric for dipole probe. The second one is based on the Pockels effect that converts an electromagnetic (EM) field into optical modulation. Our objective is to improve the E x /E y near-field measurement with this second technique. The performance of the electro-optic (EO) probe is compared with dipole probes of 2.5 and 5 mm with the use of simulations and measurements, on a wire above a ground plane and on coupled microstrip lines. At the end, a discussion about the technical limitations of the EO probe is made.

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“…To study such a radiation, the IRSEEM laboratory developed a near-field (NF) test bench [16][17][18] and also an inverse-method modeling method based on the optimization of equivalent sources constituted by EM elementary dipoles capable to reproduce the same radiation as the disturbing elements [19][20][21][22][23][24]. Fig.…”

Section: Introductionmentioning

confidence: 99%

Application of a Hybrid Model for the Susceptibility of Complex Form Metallic Wires Perturbed by Em Near-Field Radiated by Electronic Structures

Rajkumar¹,

Ravelo²,

Bensetti³

et al. 2012

PIER B

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Abstract-A modeling of the metallic wires susceptibility facing to the disturbances caused by electromagnetic (EM) near-field (NF) radiated by electronic structures in radio frequencies (RF) is introduced by using a hybrid method. This latter is based on the use of the given EM-data calculated or determined from the standard computation tools associated with basic analytical methods expressing the coupling voltages at the victim wire extremities and the EM-NF radiations. In difference to the classical methods based on the far-field radiations, the main benefit of this method lies on the possibility to take into account the evanescent waves from the disturbing elements. The basic principle illustrating the hybrid method principle is explained. To verify the relevance of the method proposed, we consider a metallic wire having cm-length above the ground plane disturbed by the EM-near-waves from the electronic circuits in proximity. For that, we model the EM radiation of the disturbing electronic circuits and then, apply the hybrid method to evaluate the coupling voltages induced through the wires. By considering the radiations around hundreds MHz, we demonstrate that the hybrid method proposed enables us to generate voltages in good agreement with the simulations performed with the commercial tools. Two types of realistic configurations are studied. First, with a microstrip loop circuit radiating at about 0.7 GHz, we calculated induced voltages at the extremities of the structures. Then, the same analysis was made with a 3D-model coil self for the large band from 0.1 GHz to 0.5 GHz. The results are in good accordance between the terminal voltages of the wire. The relative error in the second configuration falls less than 10%. This investigation is important for the EM compatibility (EMC) analysis of the radiating coupling between wires and complex electrical and electronic systems disturbed by RF harmonics.

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Characterization of the Open-Ended Coaxial Probe Used for Near-Field Measurements in Emc Applications

Cited by 78 publications

References 8 publications

Experimental Investigation on the Power Electronic Transistor Parameters Influence to the Near-Field Radiation for the Emc Applications

Experimental Investigation on the Power Electronic Transistor Parameters Influence to the Near-Field Radiation for the Emc Applications

Improvement of Electrical Near-Field Measurements With an Electro-Optic Test Bench

Application of a Hybrid Model for the Susceptibility of Complex Form Metallic Wires Perturbed by Em Near-Field Radiated by Electronic Structures

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