Characterization of the defect levels in copper indium diselenide

Abou‐Elfotouh, F.; Moutinho, H. R.; Bakry, Assem; Coutts, T. J.; Kazmerski, L. L.

doi:10.1016/0379-6787(91)90048-t

Cited by 77 publications

(18 citation statements)

References 4 publications

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“…The spectral dependence of the refractive index of CuInSe2 has been reported for both bulk and polycrystalline [92] materials as well as epitaxial films on GaAs [93] Here too, significant discrepancies are found in the reported data.…”

Section: Optical Properties Of Ternary Cu-iii-vi Materialscontrasting

confidence: 46%

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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This project was initiated after the Boeing Company decided to terminate its photovoltaic research and development efforts, and donated some research equipment to UF. Billy Stanbery, who was part of the Boeing team, decided then to enroll at UF to pursue a Ph.D degree. As such these events constituted a rare direct technology transfer from industry to a university. This helped to preserve more than the published legacy of the solar cell efforts at Boeing, and jump-started a comprehensive, multifaceted, and multidisciplinary copper indium diselenide solar cell research effort at UF. 5-15 Micro-Raman scattering spectra of islands on two indium-rich CIS films grown on GaAs (100). The uppermost curve is from an island "pool" on a sodium-dosed film and the lower two are single and averaged spectra from isolated islands on the sample without sodium shown in Figure 5- field. It focused primarily on the physical and opto-electronic properties of the general class of I-III-VI2 and II-IV-V2 compound semiconductors. More recent reviews specifically oriented towards CIS materials and electronic properties [2][3][4][5][6] are also recommended reading for those seeking to familiarize themselves with key research results in this field.There are also a number of excellent books and reviews on photovoltaic device physics [7,8], on the general subject of solar cells and their applications [9,10], and others specifically oriented towards thin-film solar cells [11,12] Researchers have not always been careful to reserve the use of the compound designation CuInSe2 for single-phase material of the designated stoichiometry, an imprecision that is understandable in view of the difficulty in discriminating CuInSe2 from some other compounds in this material system, as will be discussed in detail elsewhere in this treatise. The compound designations such as CuInSe2 will be reserved herein for reference to single-phase material of finite solid solution extent, and multiphasic or materials of indeterminate structure composed of copper, indium, and selenium will be referred to by the customary acronym, in this case CIS. 3 This review begins with an overview of the physical properties of the principal copper ternary chalcogenides utilized for PV devices, including their thermochemistry, crystallography, and opto-electronic properties. All state-ofthe-art devices rely on alloys of these ternary compounds and employ alkali impurities, so the physical properties and effects of these additives will be presented, with an emphasis on their relevance to electronic carrier transport properties. This foundation will provide a basis from which to address the additional complexities and variability resulting from the plethora of materials processing methods and device structures which have been successfully employed to fabricate high efficiency PV devices utilizing absorbers belonging to this class of materials. Phase Chemistry of Cu-III-VI Material SystemsSignificant technological applications exist for Ag-III-VI2 compounds as non-linear optical mat...

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Section: Optical Properties Of Ternary Cu-iii-vi Materialscontrasting

confidence: 46%

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Anderson¹,

Stanbery²

2001

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“…This is because mobile Cu i ϩ is a shallow donor ͑Ϸ55 meV below the conduction band͒. 7,8 In the case of CdTe the exact energy levels associated with mobile Li i ϩ and Ag i ϩ are not known, but for these devices the capacitance and become independent of frequency below 2 a͒ kHz. That implies that the levels associated with these defects are deeper, based on their longer lifetimes.…”

Section: Methodsmentioning

confidence: 98%

Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift

Lyubomirsky

Rabinal

Cahen

1997

Journal of Applied Physics

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We show that the transient ion drift (TID) method, which is based on recording junction capacitance under constant reverse bias [A. Zamouche, T. Heiser, and A. Mesli, Appl. Phys. Lett. 66, 631 (1995)], can be used not only for measurements of the diffusion coefficient of mobile impurities, but also to estimate the concentration of mobile species as part of the total dopant density. This is illustrated for CdTe, contaminated by Cu, and intentionally doped by Li or Ag and for CuInSe2. We show also that, with some restrictions, the TID method can be used if the mobile ions are major dopants. This is demonstrated using Schottky barriers on CdTe, and p–n junction devices in (Hg,Cd)Te, and CuInSe2. The values that we obtain for the diffusion coefficients (for Li, Ag, and Cu in CdTe and for Cu in CuInSe2) agree well with measured or extrapolated values, obtained by other methods, as reported in the literature. Furthermore, we could distinguish between diffusion and chemical reactions of dopants, as demonstrated for the case of Cu in CdTe and Ag-doped (Hg,Cd)Te. In the former case this allows us to separate copper-free from contaminated CdTe samples.

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“…The assignment of the ionization energies of different intrinsic defect states is shown in Table II. This is done by comparing the measured values with the previously published [5] band energy diagram. The measured deep levels in samples FI-1, AG5, C2-1-3 and F4-1 may be created by a complex of two or more intrinsic defects.…”

Section: Resultsmentioning

confidence: 99%

Study of deep levels in Schottky/CuInSe2 single-crystal devices by deep-level transient spectroscopy measurements

Bakry

El‐Naggar

1996

J Mater Sci: Mater Electron

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Characterization of the defect levels in copper indium diselenide

Cited by 77 publications

References 4 publications

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Processing of CuInSe2-Based Solar Cells: Characterization of Deposition Processes in Terms of Chemical Reaction Analyses. Final Report, 6 May 1995 - 31 December 1998

Room-temperature detection of mobile impurities in compound semiconductors by transient ion drift

Study of deep levels in Schottky/CuInSe2 single-crystal devices by deep-level transient spectroscopy measurements

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