Study of deep levels in Schottky/CuInSe2 single-crystal devices by deep-level transient spectroscopy measurements

Will ultrathin CIGS solar cells overtake the champion thin-film cells? Updated SCAPS baseline models reveal main differences between ultrathin and standard CIGS

“…Previous baseline models only consider one CIGS bulk defect to account for carriers recombination [12,22]. However, this study follows a different approach to CIGS deep bulk defects as they are addressed by reported defects [13,17,[64][65][66][67] both with theoretical and experimental evidence. The CIGS-based CuInSe 2 chalcopyrite semiconductor has several native point defects and the energy level values of many of such defects were calculated by Zhang et al [13] and compared with experimental findings.…”